Abstract:This paper presents a novel on-chip passive device that provides a more constant characteristic impedance over a wide frequency band compared to conventional microstrip transmission lines. This device is designed for applications whose frequencies span the range of the microwave frequency region from 1 GHz to 30 GHz up to the millimeter-wave (MMW) frequency bands greater than 30 GHz. The novel, impedance-optimized, microstrip transmission line presented is well suited to reduce the effects of characteristic impedance mismatch in high-performance on-chip analog circuits where it is desirable for the transmission line characteristic impedance to remain relatively constant in all operating frequency bands. This new device utilizes the frequency-dependent nature of the silicon substrate capacitance to reduce variation in transmission line characteristic impedance with frequency. Using specially designed metal-to-silicon substrate capacitance structures designed in "windows" that perforate a bottom grounded microstrip return line to provide additional capacitance to the signal path at lower frequencies which compensates for the higher DC inductance of the thick metal signal lines at low frequencies caused by the resistance/inductance skin-effect. The proposed structure is ideal for multi-band and ultra-wide band applications, for example, analog circuits that operate in both the WCDMA range (2.11-2.17 GHz) and also in the MMW range (f > 30 GHz). An impedance-optimized transmission line is designed and studied in a 130 nm BiCMOS technology. The proposed device exhibits significantly improved characteristic impedance behavior versus frequency compared to conventional microstrip lines and can be implemented in any silicon-based analog technology.

On-Chip Impedance-Optimized Microstrip Transmission Line For Multi-Band And Ultra-Wide-Band Microwave Applications

On-Chip Slot Antennas In 0.18 Mu M Cmos For Wireless Application

A Compact 2-18Ghz Ultra-Wideband Frequency-conversion T/R Module Based on a 3D Heterogeneous Integrated Process

Improved circuit model for coplanar-waveguide to microstrip-line transition on silicon substrate

Sub-THz Interconnect for Planar Chip-to-Chip Communications

A wideband EBG structure with 1D compact microstrip resonant cell

Novel Bandpass Filters by Using Cavity-Loaded Dielectric Resonators in A Substrate Integrated Waveguide

A compact interdigital capacitor-inserted multiband antenna for wireless communication applications

A Novel Compact Thru-Silicon-Via On-Chip Passive Mmw Bandpass Filter for 77ghz Applications

Mems-Based Transmission Lines for Microwave Applications

A Compact Meander Line-Resonator Hybrid Structure for Wideband Common-Mode Suppression

Bandpass and Bandstop Filters Using Cmos-Compatible Micromachined Edge-Suspended Coplanar Waveguides

On-Chip CPW Low-Pass Filter with 50–110 GHz Bandstop in 400 Nm Metal Thickness Technology Towards Lab-Level Ka-Band MMICs

Low-Loss Single-Band, Dual-Band, and Broadband mm-Wave and (Sub-)THz Interconnects for THz SoP Heterogeneous System Integration

Narrowband SIW-SSPP Hybrid Bandpass Filter With Compact Profile at Ka-Band

A Design And Fabrication Of Transmission Line For Esifo In Millimeter-Wave Applications

A Low loss feed line for patch antenna based on silicon in millimeter-wave applications

Multimode CRLH SIW Transmission Lines for Wideband Multiport Directional Couplers and Miniaturized Beamforming Networks

Low-Profile and Wideband Microstrip Antenna Using Quasi-Periodic Aperture and Slot-to-CPW Transition

Compact 13–34 GHz ultrawideband on‐chip bandpass filter using the coupled meandered line

50 Ohm Transmission Lines with Extreme Wavelength Compression Based on Superconducting Nanowires on High-Permittivity Substrates