Abstract:This review investigates the measurement methods employed to assess the geometry and electrical properties of through-silicon vias (TSVs) and examines the reliability issues associated with TSVs in 3D integrated circuits (ICs). Presently, measurements of TSVs primarily focus on their geometry, filling defects, and the integrity of the insulating dielectric liner. Non-destructive measurement techniques for TSV contours and copper fillings have emerged as a significant area of research. This review discusses the non-destructive measurement of contours using high-frequency signal analysis methods, which aid in determining the stress distribution and reliability risks of TSVs. Additionally, a non-destructive thermal detection method is presented for identifying copper fillings in TSVs. This method exploits the distinct external characteristics exhibited by intact and defective TSVs under thermoelectric coupling excitation. The reliability risks associated with TSVs in service primarily arise from copper contamination, thermal fields in 3D-ICs, stress fields, noise coupling between TSVs, and the interactions among multiple physical fields. These reliability risks impose stringent requirements on the design of 3D-ICs featuring TSVs. It is necessary to electrically characterize the influence of copper contamination resulting from the TSV filling process on the reliability of 3D-ICs over time. Furthermore, the assessment of stress distribution in TSVs necessitates a combination of micro-Raman spectroscopy and finite element simulations. To mitigate cross-coupling effects between TSVs, the insertion of a shield between them is proposed. For efficient optimization of shield placement at the chip level, the geometric model of TSV cross-coupling requires continuous refinement for finite element calculations. Numerical simulations based on finite element methods, artificial intelligence, and machine learning have been applied in this field. Nonetheless, comprehensive design tools and methods in this domain are still lacking. Moreover, the increasing integration of 3D-ICs poses challenges to the manufacturing process of TSVs.

Application of Broadband RF Metrology to Integrated Circuit Interconnect Reliability Analyses: Monitoring Copper Interconnect Corrosion in 3D-ICs

Computational Analysis of Mechanical and Electromigration Reliability Problems

Advanced RF/baseband Interconnect Schemes for Inter- and Intra-Ulsi Communications

Electromagnetic-Thermal Characterization Of On On-Chip Coupled (A)Symmetrical Interconnects

Wideband Circuit Model of Silicon-Based Interconnects Up to 50 GHz

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Interconnect processes and reliability for RF technology

Broadband Measurements of the Surface Impedance in Ferromagnetic Wires As a Boundary Condition for Scattering Problems

Signal Integrity Simulation and Analysis in High-Speed Interconnects by Using FDTD

Microwave evaluation of electromigration susceptibility in advanced interconnects

A New Scheme of Embedded RF Probe an Embedded Three-Port Loop of RF Parameters Detection

Analysis of Signal Propagation in High-Speed Differential Signal Lines with Full-Wave Time-Domain Technique

Attenuation Measurement of the Dielectric Rod Using Parallel Strips with a Resonable Field Environment

Measurement-based electrical characterization of through silicon vias and transmission lines for 3D integration

Extending Copper Interconnects and Epoxy Dielectrics to Multi-GHz Frequencies

Development of a Non-Invasive On-Chip Interconnect Health Sensing Method Based on Bit Error Rates

Accurate and Scalable RF Interconnect Model for Silicon-Based RFIC Applications

Roll-to-Roll In-Line Implementation of Microwave Free-Space Non-Destructive Evaluation of Conductive Composite Thin Layer Materials

High-Resolution Short-Circuit Fault Localization in a Multi-Layer Integrated Circuit using a Quantum Diamond Microscope

Time Dependent Dielectric Breakdown of Cobalt and Ruthenium Interconnects at 36nm Pitch

A Short Review of Through-Silicon Via (TSV) Interconnects: Metrology and Analysis