Abstract:An accurate scalable small-signal RF CMOS model applicable to high frequencies is developed using 3-D electromagnetic (EM)-based extraction of parasitic elements. Due to multimetal layers, vertical interconnects, substrate loss and substrate-contact rings, the extrinsic parasitic network of CMOS field-effect transistor (FET) is more complicated than GaAs FETs and does not follow simple scaling rules. In this work, we have employed 3-D EM simulation to derive the scaling rules of the CMOS FETs. After de-embedding the effects of the pads and the interconnect lines using a pair of dummy patterns with different reference planes, the layout-dependent extrinsic network parameters are extracted using 3-D full-wave EM simulations. Based on the extracted parameters, new scaling rules are proposed for the extrinsic networks for 0.13 and 0.18 $\mu{\hbox{m}}$ CMOS processes. A complete scalable RF CMOS model is constructed by combining the scalable extrinsic network with the intrinsic CMOS network, and has been validated by comparing the predicted and measured $S$-parameters of the scaled devices from a family of 0.18 and 0.13 $\mu{\hbox{m}}$ CMOS FETs up to 50 and 75 GHz, respectively. In order to validate the scalable models for circuit applications, 30 and 60 GHz small-signal amplifiers have been designed using optimum size devices predicted from the scalable models. The measured results of the circuits are in good agreement with the simulation, validating the proposed modeling methods.

Accurate and Scalable RF Interconnect Model for Silicon-Based RFIC Applications

An Equivalent Circuit Model with Current Return Path Effects for On-Chip Interconnect Up to 80 Ghz

Wideband Circuit Model of Silicon-Based Interconnects Up to 50 GHz

Scalable RFCMOS Model for 90 Nm Technology

Modeling and Characterization of On‐Chip Interconnects

Equivalent Circuit Model of On-Wafer Interconnects for Cmos Rfics

A Derived Physically Expressive Circuit Model For Integrated Passives In Rfic

A Wideband Model for On-Chip Interconnects with Different Shielding Structures

Equivalent Circuit Model of On-Wafer CMOS Interconnects for RFICs.

Performance of A Multi-Port Multi-Channel RF-Interconnect Model

Investigating the Frequency Dependence Elements of CMOS RFIC Interconnects for Physical Modeling

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

Advanced RF/baseband Interconnect Schemes for Inter- and Intra-Ulsi Communications

A Wideband Scalable and SPICE-Compatible Model for On-Chip Interconnects Up to 110 GHz

RF-interconnect for multi-Gb/s digital interface based on 10 GHz RF-modulation in 0.18 /spl mu/m CMOS

Wideband lumped element model for on-chip (a)symmetrical coupled interconnects on lossy silicon substrate

Scalable Model of On-Wafer Interconnects for High-Speed CMOS ICs

RF Equivalent‐circuit Model of Interconnect Bends Based on S‐parameter Measurements

Complex Shaped On-Wafer Interconnects Modeling for CMOS RFICs

A Coupled Efficient and Systematic Full-Wave Time-Domain Macromodeling and Circuit Simulation Method for Signal Integrity Analysis of High-Speed Interconnects

Scalable Small-Signal Modeling of RF CMOS FET Based on 3-D EM-Based Extraction of Parasitic Effects and Its Application to Millimeter-Wave Amplifier Design