Abstract:Based on several extended formulas to determine all frequency- and temperature-dependent distributed parameters of on-chip coupled asymmetrical and symmetrical interconnects on silicon substrates, the electromagnetic-thermal characteristics of interconnects were investigated in detail, including 1) wideband series impedances and shunt conductances, 2) conductive and dielectric attenuation constants of even(c) and odd (pi)-mode, 3) pulse waveform distortion and crosstalk, and 4) average power handling capability (APHC). In these investigations, a set of modified formulas were proposed to determine the mutual conductance and capacitance of asymmetrical configuration. Appropriate thermal models were employed to evaluate the rise in temperature of metal interconnects, where the lateral heat dissipation was taken into account for different spacings between two interconnects. Parametric calculations were performed to capture the hybrid effects of all geometric and physical parameters of metal interconnects, such as line thickness, line conductivity, and silicon conductivity. All numerical examples are believed to be useful in the design of (a)symmetrical interconnects for digital and radio frequency circuits.

Equivalent Circuit Model of On-Wafer CMOS Interconnects for RFICs.

Equivalent Circuit Model of On-Wafer Interconnects for Cmos Rfics

An Equivalent Circuit Model with Current Return Path Effects for On-Chip Interconnect Up to 80 Ghz

Wideband Circuit Model of Silicon-Based Interconnects Up to 50 GHz

Wideband lumped element model for on-chip (a)symmetrical coupled interconnects on lossy silicon substrate

RF Equivalent‐circuit Model of Interconnect Bends Based on S‐parameter Measurements

Scalable Model of On-Wafer Interconnects for High-Speed CMOS ICs

A Derived Physically Expressive Circuit Model For Integrated Passives In Rfic

Complex Shaped On-Wafer Interconnects Modeling for CMOS RFICs

Modeling and Characterization of On‐Chip Interconnects

A Wideband Model for On-Chip Interconnects with Different Shielding Structures

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

Investigating the Frequency Dependence Elements of CMOS RFIC Interconnects for Physical Modeling

Accurate and Scalable RF Interconnect Model for Silicon-Based RFIC Applications

Experimental Characterization of On-Chip Inductor and Capacitor Interconnect: Part II. Shunt Case

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

A derived circuit model for spiral inductors on lossy silicon substrate

Scalable RFCMOS Model for 90 Nm Technology

Improved circuit model for coplanar-waveguide to microstrip-line transition on silicon substrate

Electromagnetic-Thermal Characterization Of On On-Chip Coupled (A)Symmetrical Interconnects

A Wideband Scalable and SPICE-Compatible Model for On-Chip Interconnects Up to 110 GHz