Abstract:An accurate scalable small-signal RF CMOS model applicable to high frequencies is developed using 3-D electromagnetic (EM)-based extraction of parasitic elements. Due to multimetal layers, vertical interconnects, substrate loss and substrate-contact rings, the extrinsic parasitic network of CMOS field-effect transistor (FET) is more complicated than GaAs FETs and does not follow simple scaling rules. In this work, we have employed 3-D EM simulation to derive the scaling rules of the CMOS FETs. After de-embedding the effects of the pads and the interconnect lines using a pair of dummy patterns with different reference planes, the layout-dependent extrinsic network parameters are extracted using 3-D full-wave EM simulations. Based on the extracted parameters, new scaling rules are proposed for the extrinsic networks for 0.13 and 0.18 $\mu{\hbox{m}}$ CMOS processes. A complete scalable RF CMOS model is constructed by combining the scalable extrinsic network with the intrinsic CMOS network, and has been validated by comparing the predicted and measured $S$-parameters of the scaled devices from a family of 0.18 and 0.13 $\mu{\hbox{m}}$ CMOS FETs up to 50 and 75 GHz, respectively. In order to validate the scalable models for circuit applications, 30 and 60 GHz small-signal amplifiers have been designed using optimum size devices predicted from the scalable models. The measured results of the circuits are in good agreement with the simulation, validating the proposed modeling methods.

Scalable Small-Signal Modeling of RF CMOS FET Based on 3-D EM-Based Extraction of Parasitic Effects and Its Application to Millimeter-Wave Amplifier Design

Scalable RFCMOS Model for 90 Nm Technology

Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

A Millimeter‐wave Scalable Small Signal Model of RF CMOS Transistor Against Number of Fingers

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

A Compact Gate-Width Scalable Model for Dual-Gate GaAs Phemt

Modeling and Optimization of Substrate Electromagnetic Coupling and Isolation in Modern Lightly Doped CMOS Substrate

Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model

Accurate Small Signal Modeling and Extraction of Silicon Mosfet for Rf Ic Application

Scalable Transmission Line and Inductor Models for CMOS Millimeter-Wave Design

Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications

Accurate and Scalable RF Interconnect Model for Silicon-Based RFIC Applications

A Complete Small-Signal MOSFET Model and Parameter Extraction Technique for Millimeter Wave Applications

A Millimeter‐wave Scalable Small‐signal Modeling Approach Based on FW‐EM for AlGaN/GaN HEMT Up to 110 GHz

High Efficiency Modeling of Broadband Millimeter-Wave Cmos Fets with Gate Width Scalability by Using Pre-Modeled Cells

Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz

Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

A 220-Ghz Compact Equivalent Circuit Model of CMOS Transistors

An Improved Millimeter Wave MOSFET Model Based on BSIM4

RF CMOS Transistor Equivalent Circuit Model Up to 66 GHz

A W-Band Small-Signal Equivalent Circuit Modeling Based on 28nm CMOS Process