Abstract:Annealing Mg-implanted homoepitaxial GaN at temperatures above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects, in the form of inversion domains, contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. Triple-axis x-ray data reveal that implant-induced strain is fully relieved after annealing at 1300 °C for 10 min, indicating that strain-inducing point defects formed during implantation have reconfigured and inversion domains are formed. However, annealing at temperatures of 1400–1500 °C (one GPa N2 overpressure) eliminates the presence of the inversion domains. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop density is observed after annealing at the higher temperatures and longer times. Additionally, once inversion domains are formed and the samples are cooled to room temperature, they are shown to dissolve with subsequent annealing above 1400 °C. While such defects have been observed before, the important finding that such defects can be dissolved with a short, higher temperature step is key. Earlier work [Breckenridge et al., J. Appl. Phys. Lett. 118, 022101 (2021)] addressing electrical measurements of these types of samples showed that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements earlier work by identifying the inversion domains, which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (>1400 °C) annealing cycles to activate Mg in GaN, even if the Mg-containing inversion domains had been formed during lower temperature annealing.

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Effects of N_2 Carrier Gas Flow and System Temperature on the Quality of GaN Film

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Influence of Carrier Gas Flow Rate on the Optical Properties of GaN Films Grown by HVPE

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Influence of N2H2 carrier gas ratio on the properties of undoped GaN material

Study on Electrical Properties of N-Gan Grown at Low Temperature by Metal-Organic Vapor Phase Epitaxy

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

Positive and Negative Effects of Oxygen in Thermal Annealing of P-Type GaN

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Effect of In-Situ SiNx Grown with Different Carrier Gas on Structural and Electrical Properties of GaN-based MISHEMTs

Effects of low-temperature annealing on net doping profile of Mg-ion-implanted GaN studied by MOS capacitance–voltage measurement

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Effect of Hydrogen Annealing on the Property of Low-temperature Epitaxial Growth of Sige Thin Films on Si Substrate

The Effect of Long-Duration High-Temperature Annealing in an Air Ambient on the Properties of AlGaN∕GaN Heterostructures

Carrier transport and luminescence properties of n-type GaN

Hydrogen induced changes on hydride vapor phase epitaxy of GaN growth

Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

The effect of annealing temperature on the electronic parameters and carrier transport mechanism of Pt/n-type Ge Schottky diode.