Abstract:RF-MEMS is one of the most potential applications for MEMS products. Eutectic solder wafer bonding is one of the attractive methods for RF-MEMS wafer level packaging. A process of gold-tin hermetical wafer bonding was developed in SAIT, Korean. Different UBM systems and thin films of gold-tin were deposited on cap wafer, RF-MEMS device wafer and substrate wafer (if needed). The bonding was performed in N2 ambience with pressure. The cross section of bonding layer had been studied using SEM/EDAX. The thickness of bonding layer is uniform, ranging from 5mum to 7mum. Pretreatment is important to obtain good adhesion and successful microstructure. Voids could be detected without ashing. Optimal process, such as plasma cleaning, would eliminate these voids. There existed different regions in the bonding layer due to inter-diffusion between Au-Sn and other elements. Different intermetallic formed at the bonding layer. The compositions of the intermetallic was identified by EDAX and analyzed according to the Au-Sn phase diagram. The microstructures of the bonding layer are similar for different bonding temperatures in experiments, which indicates lower bonding temperature can get the same hermetical sealing. Typically, there are Au rich layer, AuSn IMC layer and Sn/Au-Ni-Ti layer in the bonding layer between cap wafer and substrate wafer, while there are Au layer, Au-Sn-Ni compound layer in the bonding layer between device wafer and substrate wafer. From the EDAX analysis, different intermetallic compound (IMC) can be identified as AuSn2, AuSn and other composition. Hermetical and shear strength test were performed for as-bonded dice. The test results indicated there is little difference among different bonding process. Fracture surfaces after shear test were investigated as well. The fracture was inside Au-Sn IMC. It indicates the UBM selected is suitable for application. Reliability test was also performed

Patterned Al-Ge Wafer Bonding for Reducing In-Process Side Leakage of Eutectic.

Process Development of A New Tgv Interposer for Wafer Level Package of Inertial Mems Device

Al-clad Cu Bond Wires for Power Electronics Packaging: Microstructure Evolution, Mechanical Performance, and Molecular Dynamics Simulation of Diffusion Behaviors

Au-Si Eutectic Bonding Technology for MEMS Device

A strategy of wafer-level-plastic-packaging for MEMS based on adhesive bonding

Investigation of Au/Si Eutectic Wafer Bonding for MEMS Accelerometers

Wafer Lever Packaging for Gyroscope by Au/Si Eutectic Bonding

Hermetic Packaging of Mems with Thick Electrodes by Silicon-Glass Anodic Bonding.

Novel Bonding technologies for wafer-level transparent packaging of MOEMS

Low Temperature Al Based Wafer Bonding Using Sn As Intermediate Layer

Mechanism and Process of Cu-Sn Bonding for Wafer Level MEMS Packaging

Microstructure of AuSn Wafer Bonding for RF-MEMS Packaging

A low temperature, non-aggressive wafer level hermetic package with UV cured SU8 bond

Electrical interconnect in MEMS/NEMS devices by Au/a-Si eutectic reaction

Recent Developments in Low Temperature Wafer Level Metal Bonding for Heterogenous Integration

Low Temperature Eutectic Alloy Bonding Used in MEMS-Based Solid Propellant Microthrusters Array

Wafer-Level Packaging Method For Rf Mems Applications Using Pre-Patterned Bcb Polymer

Design and Fabrication of High Performance Wafer-Level Vacuum Packaging Based on Glass–silicon–glass Bonding Techniques

Plastic-Silicon Bonding for MEMS Packaging Application

A collective die to wafer bonding approach based on surface-activated aluminum-aluminum thermocompression bonding

Progress in wafer bonding technology towards MEMS, high-power electronics, optoelectronics, and optofluidics