Abstract:In this Letter, we investigate the threshold voltage (VTH) instability of Schottky p-GaN gate high electron mobility transistors (SP-HEMTs) under high-frequency operation by a resistive-load hard switching method. The abnormal VTH instability is observed, which is different between fully and partially depleted SP-HEMTs (FD- and PD-HEMTs). Notably, for FD-HEMT, VTH shifts positively with effective stress time. However, the VTH instability in PD-HEMT is more complex. At low VGS (e.g., 3 V) and high VGS (e.g., 6 V), VTH shifts positively with stress time consistently. Nevertheless, at intermediate VGS levels (e.g., 4 and 5 V), VTH initially shifts positively and then negatively, displaying a non-monotonous variation. Furthermore, the frequency dependence of VTH is contingent upon VGS. At low VGS, VTH exhibits a negative shift with the increase in frequency. This trend inverses when VGS exceeds 4 V. And it should be noted that the extracted VTH under high-frequency operation is lower than their quasi-static values for both transistor types. This work depicts the physical process and mechanism of the abnormal VTH instability; different from the quasi-static case, hole accumulation effects will be enhanced due to the high dV/dt, which results in a lower VTH. The distinct VTH behaviors of FD- and PD-HEMTs are closely related to the trapping effects, as well as hole accumulation and insufficiency, within the two different p-GaN gate layers.

Carrier Transport Mechanisms Underlying the Bidirectional ${V}_{mathrm{{TH}}}$ Shift in p-GaN Gate HEMTs Under Forward Gate Stress

Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-Gan AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

OFF-State Drain-Voltage-Stress-Induced VTH Instability in Schottky-Type P-Gan Gate HEMTs

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Impact of Carrier Injections on the Threshold Voltage in P-Gan Gate AlGaN/GaN Power HEMTs

Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

The ID Instability Induced by Reverse Conduction Stress in P-Gan Gate HEMTs

The I D Instability Induced by Reverse Conduction Stress in p-GaN Gate HEMTs

Physical insight into the abnormal V TH instability of Schottky p -GaN HEMTs under high-frequency operation

Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -Gan Gate HEMTs

Time-Dependent Threshold Voltage Instability Mechanisms of P-Gan Gate AlGaN/GaN HEMTs under High Reverse Bias Conditions

Physical Insight into the Abnormal VTH Instability of Schottky P-Gan HEMTs under High-Frequency Operation

Impact of Instability of Schottky-Type p-GaN Gate HEMTs on Switching Behaviors

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT