Abstract:Highly stable threshold voltage $({V}_{\text {TH}})$ characteristics are an essential reliability requirement for p -GaN/AlGaN/GaN high-electron-mobility transistors (p-GaN HEMTs) to withstand various gate bias stresses for power applications. In this work, we demonstrate high- ${V}_{\text {TH}}$ (3.0 V) p-GaN HEMTs with robust ${V}_{\text {TH}}$ stability by p -GaN gate engineering via Mg doping and activation. The ${V}_{\text {TH}}$ degradation rates of the resulting device under both pulsed- ${I}/{V}$ and bias temperature instability (BTI) stress conditions are less than 10% at high temperatures up to 150°, which is much lower than that of conventional Schottky-type p -GaN HEMTs (20%–30%). Such notable ${V}_{\text {TH}}$ characteristics are due to the impact ionization (I.I.)-dependent hole compensation under certain gate stress, which effectively alleviates the electron trapping effect and reduces positive ${V}_{\text {TH}}$ shift. The I.I. occurring in the fully depleted p -GaN layer has been confirmed by both positive temperature-dependent gate breakdown characteristics and numerical simulations. Furthermore, shallow- and deep-level hole traps are identified in the gate-stack of high- ${V}_{\text {TH}}$ devices by performing the deep-level transient spectroscopy (DLTS) technique. Consequently, the trapping effect associated with hole traps may also alleviate the undesired electron-trapping-induced ${V}_{\text {TH}}$ shift. These results provide a critical understanding of the ${V}_{\text {TH}}$ stability of the high- ${V}_{\text {TH}}$ p -GaN HEMTs (HVT-HEMTs) and important design guidance for commercial device development.

Time-Dependent Threshold Voltage Instability Mechanisms of P-Gan Gate AlGaN/GaN HEMTs under High Reverse Bias Conditions

Investigation on the Threshold Voltage Instability Mechanism of P-Gan Gate AlGaN/GaN HEMTs under High-Temperature Reverse Bias Stress

Time-Resolved Threshold Voltage Instability of 650-V Schottky Type p-GaN Gate HEMT Under Temperature-Dependent Forward and Reverse Gate Bias Conditions

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization

Electrical Performances Degradations and Physics Based Mechanisms under Negative Bias Temperature Instability Stress for P-Gan Gate High Electron Mobility Transistors

Analysis of VTH Degradation and Recovery Behaviors of P-Gan Gate HEMTs under Forward Gate Bias

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Degradation Behavior and Mechanisms of E-mode GaN HEMTs with p-GaN Gate under High Temperature Gate Bias Stress

High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped P-Gan Engineering

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of P-Gan HEMT under Reverse-bias Stress

Observation of Threshold Voltage Instabilities in Algan/Gan Mis Hemts

Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-Gan AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Electrical Degradations of P-Gan HEMT under High Off-state Bias Stress with Negative Gate Voltage

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

Impact of Negative Gate Stress on the Reliability of P-Gan Gate HEMT Devices under Dynamic Switching Operation

Characterization of Different Trap States in AlGaN/GaN MIS-HEMTs under High Reverse Gate Stress

Different Gate Current Degradation Mechanisms in AlGaN/GaN High Electron Mobility Transistors

Threshold Voltage Instability (PBTI) of GaN-Based Recessed MOS-HEMTs with Fast-IV-Sweep Method

Exploration of Physicochemical Mechanism for Negative Bias Temperature Instability in GaN‐HEMTs by Extracting Activation Energy of Dislocations