Abstract:This letter reports a study on statistical variability of random dipole fluctuation-induced variation (DFV) in gate-all-around (GAA) nanosheet devices that adopt the interface dipole engineering technique for ${V} _{\text {t}}$ modulation, a new intrinsic device variability source that has yet been reported. The impact of DFV with the incorporation of La and Al is characterized by threshold voltage standard deviations ( $\sigma _{V_{\text {t}}}$ ), which are 3.7–8.2-mV and 7.7–17.2-mV for the dipole-induced potential shifts of 100–500-meV in the calibrated NFET and PFET devices, respectively. DFV follows the Pelgrom law. When device shrinks, $\sigma _{V_{\text {t}}}$ due to DFV will increase inversely proportional to the square root of channel area. Furthermore, as a new source of variability, DFV is compared with metal grain granularity (MGG), random dopant fluctuation (RDF), and oxide thickness variation (OTV) using the statistical impedance field method (sIFM) simulation technique. The results show that DFV contributes 10% (NFET) and 25% (PFET) to the overall variation when the dipole-induced potential shifts are set at 300 meV, indicating that DFV is a significant contributor to device variability with importance second only to MGG.

Statistical Variability Analysis In Vertically Stacked Gate All Around Fets At 7 Nm Technology

Impact of Process Variability on Threshold Voltage in Vertically-Stacked Nanosheet TFET

Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs

Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETs

Impact of Process Variation on Nanosheet Gate-All-Around Complementary FET (CFET)

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Variability in nano-scale intrinsic silicon-on-thin-box MOSFETs (SOTB MOSFETs)

Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs.

Numerical Study on Effects of Random Dopant Fluctuation in Double Gate Tunneling FET

Investigation on Variability in Metal-Gate Si Nanowire Mosfets: Analysis of Variation Sources and Experimental Characterization

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors

Study of Work-Function Variation Effects in Multigate Tunneling Field Effect Transistors

Impact of Random Dipole Fluctuation-Induced Variation on Nanosheet Devices

Design technique co-optimization approach to GAA FETs for inverter design at advanced technology node

Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation.

A Comprehensive Extraction Method to Decompose Different Random Variation Impacts in bulk FinFET Technology

Effects of Gate Metal and Channel Shape on the Variability of Junctionless Field-Effect Transistor

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs