Abstract:Ge complementary metal oxide semiconductor (CMOS) is promising for scaling beyond the Si CMOS due to its higher carrier mobility than Si. Analogue to classical SiO2/Si system in the Si CMOS technology, various interface/bulk charges including interface traps (Q(it)), fixed surface state charges (Q(f)), trapped positive charges (Q(pt)) and negative charges ((Q(nt)) in GeO2/Ge system are also crucial both for the device performance and reliability. Because small amounts of charges would cause photoemission peak shift characterized by x-ray photoemission spectroscopy (XPS), it offers a feasible way to evaluate various charge densities by measuring the band bending in Ge substrate from Ge 3d core-level energy shift at GeO2/Ge interface. Moreover, photoemission peak shifts as a function of x-ray irradiation time have been widely accepted for characterization of charge trapping phenomena. Here, we report a band bending analysis at GeO2/Ge interface of featuring vital charge characteristics for diverse device applications by XPS. HF-last cleaned Ge surface was verified to tend to be p-type, irrespective of the bulk conductivity. The n-Ge/GeO2 interfaces exhibit a reduction of upward band bending evolution of Ge substrate, while p-type-Ge/GeO2 interfaces indicate a reduction of downward band bending evolution when comparing the different quality GeO2/Ge interfaces. Based on the requirement of surface charge neutrality, such observation has been attributed to a dominated passivation effect to negatively charged interface traps and the positive fixed surface state charges, respectively. Moreover, a time evolution of Ge 3d and O 1s signals reveals a progressive band bending modification at GeO2/Ge interface, clarifying the thermally-grown GeO2 also contains electron traps (Q(nt)). Ultimately, the four types of charges relying on the GeO2/Ge quality were modeled to correlate with the observed Ge band bending evolution, which would impact both the device operation and reliability.

Band bending analysis of charge characteristics at GeO2/Ge interface by x-ray photoemission spectroscopy

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Effects of the Interface-related and Bulk-fixed Charges in Ge/GeO2 Stack on Band Bending of Ge Studied by X-ray Photoemission Spectroscopy

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Conduction Band Offset at Geo2/Ge Interface Determined by Internal Photoemission and Charge-Corrected X-Ray Photoelectron Spectroscopies

Impact of Oxide Defects on Band Offset at Geo2/Ge Interface

Layer-resolved band bending at the n-SrTiO3(001)/p-Ge(001) interface

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces

Impact of GeO2 passivation layer quality on band alignment at GeO2/Ge interface studied by internal photoemission spectroscopy

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

MOS Interface Engineering for High-Mobility Ge CMOS

Modeling of negatively charged states at the Ge surface and interfaces

Interface Properties of Ge3n4/Ge(111): Ab Initio and X-Ray Photoemission Spectroscopy Study