Abstract:Ge gate stacks by exposing oxygen plasma to ALD Al2O3/Ge were proposed.GeOx formed between Al2O3 and Ge significantly reduces interface state density.High electron mobility of 690cm2/Vs in Ge nMOSFETs with EOT of 0.7-0.8nm.High hole mobility of 546cm2/Vs in Ge p-MOSFETs with EOT of 0.7-0.8nm. CMOS utilizing high mobility Ge channels on Si substrates is expected to be one of promising devices for high performance and low power advanced LSIs. Here, one of the most critical issues in Ge MOSFETs is the realization of gates stacks with superior MOS interfaces. We have proposed novel Ge gate stack technology using ultrathin Ge oxide interfacial layers (ILs). The Ge ILs are formed by exposing ECR oxygen plasma to thin Al2O3 on Ge substrates, which is called plasma post oxidation. Here, Al2O3 serves as a sufficient oxygen barrier that suppresses the growth of unnecessarily-thick GeOx IL, thanks to its intrinsic oxygen permeability. The relationship between the GeOx thickness and interface state density (Dit) is evaluated. Also, in order to further reduce EOT, we have introduced a revised version of gate stack formation using HfO2/Al2O3 stacks. The role of ultrathin Al2O3 films on the properties of the gate stacks is studied. As a result, HfO2/Al2O3/GeOx/Ge gate stacks having EOT of 0.72nm as the thinnest value have been realized with the excellent interface quality. High electron mobility of 754 and 690cm2/Vs and hole mobility of 596 and 546cm2/Vs have been obtained in EOT of 0.82 and 0.76nm, respectively.

Impact of GeO2 passivation layer quality on band alignment at GeO2/Ge interface studied by internal photoemission spectroscopy

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Impact of Oxide Defects on Band Offset at Geo2/Ge Interface

Impact of GeOx Interfacial Layer Thickness on Al2O3/Ge MOS Interface Properties

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Impact of Back Interface Passivation on Electrical Properties of Ultrathin-Body Germanium-On-Insulator (geoi) Mosfets

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Suppression of Ald-Induced Degradation of Ge Mos Interface Properties by Low Power Plasma Nitridation of Geo2

MOS Interface Engineering for High-Mobility Ge CMOS

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Impact of Postdeposition Annealing Ambient on the Mobility of Ge Nmosfets with 1-Nm EOT Al2O3/GeOx/Ge Gate-Stacks

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

Investigation of Different Interface Passivation on Germanium: RTO-GeO2 and Nitrogen-Plasma-passivation