Abstract:Wafer bonding techniques, which are very different from epitaxial growth techniques, can be used not only for the fabrication of micro-electromechanical systems (MEMS), silicon on insulator (SOI), and Si-based device integration, but have recently been applied to the achievement of high-quality homojunctions and heterojunctions in the photoelectric field. That is, carrier transport at the interface of the wafer-bonded junction should be unimpeded and carrier recombination at the bonded interface should be restrained. For Si/Si wafer bonding, although a high bonding strength and a bubble-free bonded interface are needed for the fabrication of the MEMS and SOI, a perfect Si/Si bonded interface which is expected to be bubble-free, oxide-layer-free, and dislocation-free is needed for the achievement of high-performance photoelectric devices, such as Ge/Si single-photon avalanche photodiodes. On the other hand, for Ge/Si heterogeneous hybrid integration (high lattice mismatch), threading dislocations (TDs) in the Ge film can be eliminated by low-temperature heterogeneous wafer bonding, due to the lower diffusion rate of misfit dislocations (MDs) at the Ge/Si bonded interface. This is very different from epitaxial growth, in which high-density TDs form in the integrated Ge layer due to the threading of MDs at high-temperature. In this paper, we review the wafer bonding of Si-based semiconductors based on different bonding methods. The advantages and disadvantages of different bonding methods are pointed out for comparison. We focus on the illustration of the fabrication of Si/Si and Ge/Si wafer pairs with TD-free, bubble-free, and oxide-layer-free bonded interfaces. Finally, the outlook for the development of Si/Si and Ge/Si wafer bonding and devices based on the wafer bonding technique is considered. We trust that this work may provide guidance for the low-temperature heterogeneous hybrid integration of different group materials with ultrahigh lattice mismatch, such as GeSn on Si and III–V materials on Si.

Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer

Bonding mechanisms and electrical properties of Ge/Si and Si/Si bonded wafers achieved by thin microcrystalline Ge interlayer

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

A review: wafer bonding of Si-based semiconductors

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Electrical Properties of the Bonding Interface in a (110)/(100) Direct-Silicon-Bonded (DSB) Wafer

Ni Induced Crystallization of Amorphous SiGe

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature

Bonding properties of amorphous silicon and quantum confinement in the mixed phases of silicon nano slabs

In-situ formation of SiGe alloy by electron beam evaporation and the effect of post deposition annealing on the energy band gap

Effects of low-temperature water vapor annealing of strained SiGe surface-channel pMOSFETs with high-κ dielectric

A Model of Low‐Temperature Wafer Bonding And Its Applications

Effect of A Ge Interlayer on the High-Temperature Behavior of Nisi Films

Ultra-shallow Junctions Formed Using Microwave Annealing

Structural and Electrical Properties of Laser-Crystallized Nanocrystalline Ge Films and Nanocrystalline Ge/SiN X Multilayers