Abstract:Indium–gallium–zinc oxide (IGZO) as a star material has been broadly applied in multiple functional devices, including planar displays, flexible electronic devices, and photoelectronics. In recent years, the development of artificial intelligence and great data also extends the application of IGZO-based thin film transistors (TFTs) to memory, memristors, and neuromorphic computing. Thus, the research of high performance and reliable IGZO TFTs attracts tremendous attention worldwide. Herein, a high-quality IGZO thin film was deposited via atomic layer deposition, and a dual-gate (DG) IGZO TFT was fabricated. Comprehensive electrical characterization was conducted on the fabricated DG IGZO TFTs, revealing that DG IGZO TFTs exhibited good performance for reliability analysis. The reliability and degradation mechanism of the DG IGZO TFT was systematically investigated under bias stress at room temperature and elevated temperatures of 350, 400, and 450 K by the comprehensive electrical characterization. Results indicate that the defects of the dual gate insulators and the interfaces majorly influence the degradation under bias stresses, while the carrier scattering of the IGZO channel is the major degradation mechanism under elevated temperatures. These findings highlight the degradation mechanism of the DG IGZO TFT under bias stress and elevated temperatures from a novel viewpoint, which provides a utilizable reference to its application in circuits.

Improvement in Reliability of Amorphous Indium–gallium–zinc Oxide Thin-Film Transistors with Teflon/SiO2 Bilayer Passivation under Gate Bias Stress

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment

Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETs

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses

Thermal Annealing Improved Stability of Amorphous InGaZnO Thin-Film Transistors Under AC Bias Stresses

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Reliability Analysis under Bias Stress and Elevated Temperature of Dual-Gate IGZO TFT

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

P‐9: Improved Electrical Stability of Double‐Gate A‐igzo TFTs

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

Two-step Degradation of A-Ingazno Thin Film Transistors under DC Bias Stress

P‐6.1: Asymmetric Effects of Gate‐Bias Stress Voltage on the Stability under Positive and Negative Gate‐Bias Stress of A‐igzo TFTs

Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO2 Interfacial Layer on PECVD SiO2 Gate Insulator

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate

Effects of Mechanical Stress on Flexible Dual‐Gate A‐ingazno Thin‐Film Transistors

Enhancement of Positive Bias Stress Stability for IGZO TFTs by A CAAC Gd-AZO Bulk Layer