Abstract:HfO2-based films have attracted much attention due to their robust ferroelectric properties at the nanometer scale and their great potential for data storage. The interface between the substrate and the HfO2-based film has a significant effect on its ferroelectric behavior. A seed layer between the films and substrates, such as a ZrO2 seed layer, is proved to be an effective way to realize the beneficial interface effect. However, the interfacial tuning mechanism for the ferroelectric properties of HfO2-based thin films brought by the substrate or seed layer remains unclear so far. By performing first-principles calculations, the phase stability and crystalline orientation of HfO2 thin films on ZrO2 seed layers are systematically studied. Results indicate that the ZrO2 seed layer, especially the [111]-oriented one, substantially stabilizes the orthorhombic ferroelectric phase and the high-symmetry tetragonal phase of the HfO2 thin film compared with the most stable monoclinic phase. Furthermore, the polarization magnitude of the HfO2 film on the ZrO2 seed layer is in good agreement with experiment. The [100]-oriented ZrO2 seed layer also has a great effect on the stability of the orthorhombic ferroelectric phase of the HfO2 thin film. These results are meaningful for the understanding of the interfacial effects of the ferroelectricity of HfO2-based thin films and the development of ferroelectric devices.

Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors with ZrO2 Seed Layers

Performance Improvement of Hf0.5Zr0.5O2 Based Ferroelectric-Field-Effect Transistors with ZrO2 seed layers

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements.

Hf0.5Zr0.5O2-Based Ferroelectric Field-Effect Transistors With HfO2 Seed Layers for Radiation-Hard Nonvolatile Memory Applications

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

HfZrO<sub>x</sub>-Based Ferroelectric Tunnel Junction With Crested Symmetric Band Structure Engineering

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Interface Engineering for Performance and Reliability Optimization of Hf0.5Zr0.5O2 FeFETs: Device Integration and Electrical Characterization

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Interface Effects Induced by a Zr O 2 Seed Layer on the Phase Stability and Orientation of Hf O 2 Ferroelectric Thin Films: A First-Principles Study

Back-End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity

Ultrafast Switching of Ferroelectric HfO2-ZrO2 under Low Voltage with Layered Structure

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films