Abstract:The poor endurance of the ferroelectric (FE) HfO2 (Fe-HfO2) material-based FE field-effect transistor (Fe-FET) remains a major challenge for its future commercial production. Here we propose a high-κ interface seed layer (SL) in the metal-FE-insulator-semiconductor (MFIS) gate stack to address this issue. We fabricated Hf0.5Zr0.5O2 (HZO) FE thin films on various high-κ dielectric SLs, including ZrO2, HfO2, (HfO2)0.75(Al2O3)0.25 (HAO), and Al2O3, and investigated their microstructures, ferroelectricity, and memory characteristics in the MFIS devices. The results show that the nucleation and growth of the FE orthorhombic phase in HZO films are affected not only by the surface energy but also by the microstructure of the high-κ SL. Additionally, we clarified the role of the high-κ SL on the memory characteristics of the MFIS devices, which were reasonably explained by the accurately calculated interface electric field. Finally, we realized a good tradeoff between the FE polarization and interface charge injection in the MFIS device with HAO high-κ SL, demonstrating a large FE window (> 1.0 V), excellent retention (> 1.6×104 s), and endurance cycles (> 105). The results will provide valuable ideas to overcome the challenge of endurance in the Fe-HfO2-based FeFET and contribute to developing other high-performance electron devices with Fe-HfO2 films grown on a dielectric SL.

Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements.

Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors with ZrO2 Seed Layers

Performance Improvement of Hf0.5Zr0.5O2 Based Ferroelectric-Field-Effect Transistors with ZrO2 seed layers

Hf0.5Zr0.5O2-Based Ferroelectric Field-Effect Transistors With HfO2 Seed Layers for Radiation-Hard Nonvolatile Memory Applications

Hf0.5Zr0.5O₂-Based Ferroelectric Field-Effect Transistors with HfO₂ Seed Layers for Radiation-Hard Nonvolatile Memory Applications

Demonstration of Large MW and Prominent Endurance in a Hf0.5Zr0.5O2 FeFET with IGZO Channel Utilizing Postdeposition Annealing

Compatibility of HfN Metal Gate Electrodes with Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer

2-Bit/cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Improvement of Memory Window of Silicon Channel Hf0.5Zr0.5O2 FeFET by Inserting Al2O3/HfO2/Al2O3 Top Interlayer

Stacked HZO/α-In 2 Se 3 Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

HAO $+$ Al $_{\text{2}}$ O $_{\text{3}}$ FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention

HfO 2 –ZrO 2 Superlattice Ferroelectric Field-Effect Transistor With Improved Endurance and Fatigue Recovery Performance

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

HfO2–ZrO2 Superlattice Ferroelectric Field-Effect Transistor with Improved Endurance and Fatigue Recovery Performance

Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer

High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM