Abstract:A comprehensive physical model is introduced to account for the superior endurance characteristics of TaO X -based RRAM with bi-layered Ta 2 O 5-X /TaO 2-X stack by considering the influence of oxygen content in TaO 2-X layer. In the physical model, the TaO 2-X layer acts as an oxygen reservoir to store and release oxygen ions (O 2- ) during switching cycles and different oxygen contents in TaO 2-X layer correspond to different capabilities to take redox reactions with O 2- . The proposed model is implemented into an atomic Monte-Carlo simulator involving the evolution of oxygen distribution in Ta 2 O 5-X /TaO 2-X stack to reproduce the impacts of different TaO 2-X layers on endurance performance. Results reveal that the optimized TaO 2-X layer with the feature of easily storing O 2- as lattice oxygen (LO) during SET and decomposing to release O 2- during RESET is beneficial to enhance the endurance property.

Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta 2 O 5 /tao X Bi-Layer Structure

Resistive Switching Performance Improvement Of Ta2o5-X/Taoy Bilayer Reram Devices By Inserting Alo Delta Barrier Layer

Cluster-Type Filaments Induced by Doping in Low-Operation-Current Conductive Bridge Random Access Memory

Controllable Growth of Conductive Filaments in Sandwiched CBRAM Cells Using Self-Assembled Cu/W Multilayer Thin Films As the Electrodes

Tuning The Switching Behavior Of Binary Oxide-Based Resistive Memory Devices By Inserting An Ultra-Thin Chemically Active Metal Nanolayer: A Case Study On The Ta2o5-Ta System

Uniformity and Retention Improvement of TaOx-Based Conductive Bridge Random Access Memory by CuSiN Interfacial Layer Engineering

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM

Interface Engineering Via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory

Superior Retention of Low-Resistance State in Conductive Bridge Random Access Memory with Single Filament Formation

Ultralow Power Switching of Ta2O5/AlOXbilayer Synergistic Resistive Random Access Memory

Resistive Switching Performance Improvement of ${\rm Ta}_{2}{\rm O}_{5-x}/{\rm TaO}_{y}$ Bilayer ReRAM Devices by Inserting ${\rm AlO}_{\delta}$ Barrier Layer

Understanding the underlying physics of superior endurance in Bi-layered TaO<inf>X</inf>-RRAM

Thin TiOx Layer As a Voltage Divider Layer Located at the Quasi-Ohmic Junction in the Pt/Ta2O5/Ta Resistance Switching Memory.

Enhanced Switching Stability in Ta 2 O 5 Resistive RAM by Fluorine Doping

Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAM

Compliance-Current Manipulation of Dual-Filament Switching in a Ta/Ta<sub>2</sub>O<sub>5</sub>/In-Sn-O Structure with an Ultralow Power Consumption

Modeling and Optimization of Bilayered TaO X RRAM Based on Defect Evolution and Phase Transition Effects

Stable Self-Compliance Resistive Switching in AlOδ/Ta2O5−x/TaOytriple Layer Devices

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

High Speed and Multi-Level Resistive Switching Capability of Ta2O5 Thin Films for Nonvolatile Memory Application