Abstract:Ta2O5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta2O5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiOx (x < 2) and played the role of a series resistor, whose resistance value was comparable to the on-state resistance of the Ta2O5 RS layer. The series resistor TiOx efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiOx layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

High Speed and Multi-Level Resistive Switching Capability of Ta2O5 Thin Films for Nonvolatile Memory Application

Bistable Resistance Switching of Cu/Ti:ZrO2/Pt for Nonvolatile Memory Application

Bipolar Switching Behavior in TiN/ZnO/Pt Resistive Nonvolatile Memory with Fast Switching and Long Retention

Stabilizing Resistive Switching Performances of TiN/MgZnO/ZnO/Pt Heterostructure Memory Devices by Programming the Proper Compliance Current

Thin TiOx Layer As a Voltage Divider Layer Located at the Quasi-Ohmic Junction in the Pt/Ta2O5/Ta Resistance Switching Memory.

Bipolar Resistance Switching Characteristics in Tin/Zno:Mn/Pt Junctions Developed for Nonvolatile Resistive Memory Application

Bistable Resistance Switching of Cu/Cu: HfO2/Pt for Nonvolatile Memory Application

Investigation of Resistive Switching in Cu-Doped Hfo2 Thin Film for Multilevel Non-Volatile Memory Applications

Bipolar Resistive Switching Characteristics of Tin/Hfox/Ito Devices for Resistive Random Access Memory Applications

Resistive switching and synaptic learning performance of a TiO2 thin film based device prepared by sol–gel and spin coating techniques

Resistive Switching Performance Improvement Of Ta2o5-X/Taoy Bilayer Reram Devices By Inserting Alo Delta Barrier Layer

Multi-level Resistive Switching Characteristics of W/Co:TiO2/FTO Structures

Reliable Resistive Switching Behaviour of Ag/Ta2O5/Al2O3/p++-Si Memory Device

Resistive Switching Behaviour of A Tantalum Oxide Nanolayer Fabricated by Plasma Oxidation

Voltage-Controlled Bistable Resistive Switching Behavior Based On Ni0.5zn0.5fe2o4/Bifeo3/Nb:Srtio3 Heterostructures

Highly Uniform Resistive Switching Characteristics of Tin/Zro2/Pt Memory Devices

Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure

Performance Enhancement of TaOx Resistive Switching Memory Using Graded Oxygen Content

Compliance-Current Manipulation of Dual-Filament Switching in a Ta/Ta<sub>2</sub>O<sub>5</sub>/In-Sn-O Structure with an Ultralow Power Consumption

Resistive Switching Behavior in Pt/YSZ/Nb:SrTiO3 Heterostructure for Nonvolatile Multilevel Memories

Ultra-high ON/OFF Ratio and Multi-Storage on NiO Resistive Switching Device