Abstract:Utilizing 2D electron gas as a bottom electrode of V‐CBRAM could generate a tunnel gap via partial filament formation, because of the suppression of electron supply during the redox reaction in the filament formation process. This can lead to applications of multilevel cell and selector‐less memory in sub‐G0 conductance regime, with excellent switching uniformity and robust endurance characteristics compared to conventional CBRAM devices. Owing to the high reactivity and diffusivity of Ag and Cu ions, controlling the atomic filament formation and rupture processes in conductive bridge random‐access memory (CBRAM) is challenging. In this study, it is demonstrated that by using a 2D electron gas (2DEG) as the bottom electrode (BE) in a vertical‐switching CBRAM (V‐CBRAM), filament formation and rupture can be effectively managed and the tunnel gap distance created by partial filament formation can be adjusted. The 2DEG BE induces partial filament formation by limiting the number of electrons required for this process in the V‐CBRAM device, as verified via current fitting to the quantum point contact model. Varying the electron concentration and activation energy for electrons trapped in the 2DEG, when paired with various programming voltages, leads to transitions in the device resistance state via changes in the distance of the tunnel gap. This tunnel‐gap‐tunable 2DEG V‐CBRAM device, which exhibits superior switching uniformity, can be employed for nonvolatile memory applications in the sub‐G0 conductance regime, such as 3‐bit multilevel cells and selector‐less memory.

Controllable Growth of Conductive Filaments in Sandwiched CBRAM Cells Using Self-Assembled Cu/W Multilayer Thin Films As the Electrodes

Spatial Correlation of Conductive Filaments for Multiple Switching Cycles in CBRAM

Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer

Resistive Switching Characteristic of Cu Electrode-Based RRAM Device

In-situ Observation of Cu Filaments Evolution in SiO2 Layer

Kinetic Monte Carlo Simulations on Electroforming in Nanomanipulated Conductive Bridge Random Access Memory Devices

Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta 2 O 5 /tao X Bi-Layer Structure

Cluster-Type Filaments Induced by Doping in Low-Operation-Current Conductive Bridge Random Access Memory

Atomic Monte-Carlo Simulation for CBRAM with Various Filament Geometries

Performance Improvement of Conductive Bridging Random Access Memory by Electrode Alloying

Two-Dimensional (2D) Materials-Inserted Conductive Bridge Random Access Memory: Controllable Injection of Cations in Vertical Stacking Alignment of MoSe 2 Layers Prepared by Plasma-Assisted Chemical Vapor Reaction

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode.

Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas

Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM)

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Complementary Resistive Switching Behavior for Conductive Bridge Random Access Memory

Lower Power, Better Uniformity, and Stability CBRAM Enabled by Graphene Nanohole Interface Engineering

Scaling the CBRAM Switching Layer Diameter to 30 nm Improves Cycling Endurance

A Physics-Based Compact Model for CBRAM Retention Behaviors Based on Atom Transport Dynamics and Percolation Theory

Self-compliance and High-Performance GeTe-based CBRAM with Cu Electrode

Atomistic Study Of Dynamics For Metallic Filament Growth In Conductive-Bridge Random Access Memory