Abstract:We present a review and primer on the subject of conductive bridging random access memory (CBRAM), a metal ion-based resistive switching technology, in the context of current research and the near-term requirements of the electronics industry in ultra-low energy devices and new computing paradigms. We include extensive discussions of the materials involved, the underlying physics and electrochemistry, the critical roles of ion transport and electrode reactions in conducting filament formation and device switching, and the electrical characteristics of the devices. Two general cation material systems are given—a fast ion chacogenide electrolyte and a lower ion mobility oxide ion conductor, and numerical examples are offered to enhance understanding of the operation of devices based on these. The effect of device conditioning on the activation energy for ion transport and consequent switching speed is discussed, as well as the mechanisms involved in the removal of the conducting bridge. The morphology of the filament and how this could be influenced by the solid electrolyte structure is described, and the electrical characteristics of filaments with atomic-scale constrictions are discussed. Consideration is also given to the thermal and mechanical environments within the devices. Finite element and compact modelling illustrations are given and aspects of CBRAM storage elements in memory circuits and arrays are included. Considerable emphasis is placed on the effects of ionizing radiation on CBRAM since this is important in various high reliability applications, and the potential uses of the devices in reconfigurable logic and neuromorphic systems is also discussed.

Spatial Correlation of Conductive Filaments for Multiple Switching Cycles in CBRAM

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Atomic Monte-Carlo Simulation for CBRAM with Various Filament Geometries

Atomistic Study Of Dynamics For Metallic Filament Growth In Conductive-Bridge Random Access Memory

A Physics-Based Compact Model for CBRAM Retention Behaviors Based on Atom Transport Dynamics and Percolation Theory

Controllable Growth of Conductive Filaments in Sandwiched CBRAM Cells Using Self-Assembled Cu/W Multilayer Thin Films As the Electrodes

A Probe of Reliability Issues of Oxide Electrolyte Based CBRAM

A physics-based compact model for material- and operation-oriented switching behaviors of CBRAM

Cluster-Type Filaments Induced by Doping in Low-Operation-Current Conductive Bridge Random Access Memory

Anisotropic Magnetoresistance of Nano-conductive Filament in Co/HfO2/Pt Resistive Switching Memory

Conductive bridging random access memory—materials, devices and applications

An analytical model for predicting forming/switching time in conductive-bridge resistive random-access memory (CBRAM)

Physics-based Modeling and Simulation of Conductive-Bridge Random Access Memory (CBRAM)

Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals

Distinguishing uniform switching from filamentary switching in resistance memory using a fracture test

Device Simulation and Modeling of RRAM Switching Processes

Lower Power, Better Uniformity, and Stability CBRAM Enabled by Graphene Nanohole Interface Engineering

A unified model of metallic filament growth dynamics for conductive-bridge random access memory (CBRAM)

Identify the Critical Regions and Switching/Failure Mechanisms in Non-Filamentary Rram (A-Vmco) by Rtn and Cvs Techniques for Memory Window Improvement

Direct Observation of Conducting Nano Filaments in BMO Resistive Switching Memory

A Comprehensive Simulation Study on Metal Conducting Filament Formation in Resistive Switching Memories