Effects of N_2 partial pressure on the properties of TaN thin films deposited by DC reactive magnetron sputtering

KANG Jie,ZHANG Wanli,WU Chuangui,XIANG Yang,WANG Chaojie
DOI: https://doi.org/10.3969/j.issn.1001-2028.2009.06.014
2009-01-01
Abstract:TaN films were deposited by DC reactive magnetron sputtering.The effects of N2 partial pressure on the microstructure and properties of TaN films were studied.The multiphase is coexistent in the films.When the N2 partial pressure is 9%,the phases in the as-deposited films are identified as TaN(200).The optimized sheet resistance and αt are 52Ω/□ and –306×10–6 /℃.In addition,the grain size and the properties of the films such as sheet resistance andαt are increased with the rising of the N2 partial pressure.The sheet resistance and αt increase dramatically when the N2 partial pressure is over 11%.
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