Influences of Annealing Treatment on the Microstructure and Electric Properties of TaN Thin Films

JIANG Hongchuan,XIANG Yang,WANG Chaojie,MO Shaoyi,LEI Yun,ZHANG Wanli
2008-01-01
Abstract:Tantalum nitride films are deposited by reactive d.c.magnetron sputtering.The influences of annealing on the microstructures and electric properties of TaN thin films are explored.The results show that the annealing temperature and the annealing time both affect the microstructures and electric properties of TaN thin films.With the increase of the annealing temperature and annealing time,the sheet resistances of TaN thin films increase gradually. However,when the annealing temperature is higher than 800℃,the sheet resistance of the thin films increases remarkably, which is due to the oxidation of TaN thin films at too high annealing temperature.Annealing can improve the TCR of TaN thin films from-1.2×10~(-3)of as-deposited films to-7.0×10~(-4)of the film annealed at 800℃and 30min.
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