Systematical Investigations of Annealing Effects on Electrical Properties and Thermal Sensitivity Characteristics of TiO 2-Δ Thin Films by DC Reactive Magnetron Sputtering

Yonglong Qiu,Zhiming Wu,Yongfeng Ju,Jing Jiang,Zhenfei Luo,MingJun Du

DOI: https://doi.org/10.1117/12.865942

2010-01-01

Abstract:In recent years, TiO(2-delta) thin films as a kind of thermal sensitive material have been attracting more and more attention on the application of infrared devices. In this article, TiO(2-delta) thin films from the technology of DC reactive magnetron sputtering were deposited on glass substrates under the same sputtering conditions while different annealing conditions. Annealing effects on electrical properties and thermal sensitivity characteristics were systematically investigated under different annealing conditions including annealing circumstance, annealing time and annealing temperature. Results indicated that the sheet resistance (R) and temperature coefficient of resistance (TCR) of TiO(2-delta) thin films would decrease after vacuum-annealing and would increase after oxygen-annealing. Furthermore, they would increase more and more when the annealing time and the oxygen flux increased during oxygen-annealing. On the contrary, R and TCR would decrease when the annealing temperature went up. Based on that, TiO(2-delta) thin films could be better applied on related devices under proper technique of annealing.