Influences of Aluminum Doping on the Micro-Structures and Electrical Properties of TaN Thin Films

JIANG Hong-chuan,WANG Chao-jie,ZHANG Wan-li,XIANG Yang,SI Xu,PENG Bin,LI Yan-rong
DOI: https://doi.org/10.3969/j.issn.1001-0548.2010.03.025
2010-01-01
Abstract:TaAlN thin films were deposited on Al2O3 substrates by reactive DC magnetron sputtering.The content of Al doping in TaN thin films was controlled by adjusting Al/Ta area ratios of the composite target.The influences of Al/Ta area ratios on the micro-structures and the electrical properties of the samples were investigated in detail.The X-ray diffraction(XRD) results show that AlN(101) and AlN(202) phases precipitate out at 2 θ of 38.5° and 65.18° in aluminum doping TaN films,respectively.With the increase of the Al/Ta area ratios,the deposition rate,resistivity and the absolute value of temperature coefficient of resistance(TCR) of the samples increase gradually.When the Al/Ta area ratio is zero,the resistivity and the absolute value of the TCR of the samples are 247.8 μΩ·cm and 12 ppm/ ℃,respectively.However,with the increase of the Al/Ta area ratio up to 29%,the resistivity and the absolute value of the TCR of the samples are increased to 2 560 μΩ·cm and 270 ppm/ ℃,respectively.
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