TaN Diffusion Barrier Layers Deposited by Reactive Magnetron Sputtering

Jia Zhenyu,Zhu Jiaqi,Shicheng Cao
DOI: https://doi.org/10.3969/j.issn.1672-7126.2012.08.18
2012-01-01
Abstract:The TaN diffusion barrier layers were deposited by reactive magnetron sputtering on silicon substrates.The influence of the growth conditions,including the N2 partial pressure,sputtering power,and Si substrate temperature on TaN properties was evaluated.The microstructures of the TaN films were characterized with grazing incidence X-ray diffraction(GIXRD),and atomic force microscopy.The results show that the sputtering power and N2 partial pressure strongly affect the surface morphologies of the TaN films.For example,the GIXRD peak intensity increased with the increases of puttering power and substrate temperature;a higher N2 partial pressure moved the preferential growth orientation towards TaN(111).The surface roughness increased with an increase of the sputtering power and a decrease of N2 partial pressure.An increase of sputtering power and a decrease of N2 partial pressure resulted in an increase of the sheet resistance.We found that the TaN films,inserted between Cu coating and SI substrate,effectively block the diffusion of Cu into Si at a temperature up to 600℃.
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