Abstract:Tantalum nitride thin films are grown on silicon wafers using a mixture of Ar/N2 using DC magnetron sputtering. The influence of nitrogen concentration on various features of tantalum nitride thin films is systematically studied. X-ray diffraction results show characteristic peaks of FCC tantalum nitride with crystallite size gradually increasing upon an augmentation in the nitrogen concentration. Field emission scanning electron microscopy images indicate that the tantalum nitride thin films are made of crystal domains with almost regular boundaries. As nitrogen concentration increases from 10 to 25%, the average domain size increases. Atomic force microscopy (AFM) results show larger surface roughness for the tantalum nitride thin films with higher nitrogen concentration owing to grain boundary diffusivity. Furthermore, quantitative characterization of 3-D surface morphology from AFM micrographs is obtained by multifractal and stereometric analyses. The results of mechanical properties show a decrease in the hardness upon increasing the nitrogen concentration due to variation in the grain size. The obtained results from the four-point probe illustrate that the specimen with higher nitrogen content displays the minimum sheet resistance due to a decrease in inter-grain boundaries emanated from the larger grain size. The current study renders a new insight in controlling the conductivity and the hardness of TaN thin film based on the deposition conditions and provide a correlation between the structural and other properties of TaN films, which is useful for a variety of semiconductor devices.

Positron Annihilation in TaN Thin Sputtering Films Prepared with Various N2 Partial Pressures

Effects of nitrogen composition on the resistivity of reactively sputtered TaN thin films

Effects of N_2 partial pressure on the properties of TaN thin films deposited by DC reactive magnetron sputtering

Effect of Nitrogen Flow Ratio on Degradation Behaviors and Failure of Magnetron Sputter Deposited Tantalum Nitride

Effect of gas Pressure on the Mechanical Properties of Sputtered TaN Films

Microstructure and Thermal Diffusivity Investigations of RF-Sputtered Tantalum Nitride Films

Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering

Kinetic surface roughening of TaN thin films sputtered at different N 2/Ar flow ratios

Reactive sputter deposition and properties of TaxN thin films

Influence of nitrogen concentration on electrical, mechanical, and structural properties of tantalum nitride thin films prepared via DC magnetron sputtering

Influence of N2 Partial Pressure on Mechanical Properties of (ti,al)n Films Deposited by Reactive Magnetron Sputtering

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

The Effect of N2 Partial Pressure on the Properties of Nb–Si–N Films by RF Reactive Magnetron Sputtering

TaN Diffusion Barrier Layers Deposited by Reactive Magnetron Sputtering

Influence of Substrate and Ar/N 2 Gas Flow Ratio on Structural, Optical and Electrical Properties of TiN Thin Films Synthetized by DC Magnetron Sputtering

COMPOSITION CONTROL AND ITS ELECTRICAL PROPERTIES OF TaNx THIN FILMS

The Effect of N/sub 2/ Partial Pressure on the Properties of Nb-Si-N Films

Preparation and Properties Characterization of Gradient Alpha-Ta(N)/Tan Bi-Layer Diffusion Barrier

Tantalum Nitride Thin Film with a Nearly Zero Temperature Coefficient of Resistance Synthesized by Magnetron Co-Sputtering

Effect of nitrogen concentration to the structural, chemical and electrical properties of tantalum zirconium nitride films