Abstract:Building usefully coherent superconducting quantum processors depends on reducing losses in their constituent materials. Tantalum, like niobium, has proven utility as the primary superconducting layer within highly coherent qubits. But, unlike Nb, high temperatures are typically used to stabilize the desirable body-centered-cubic phase, alpha-Ta, during thin film deposition. It has long been known that a thin Nb layer permits the room-temperature nucleation of alpha-Ta, although neither an epitaxial process nor few-photon microwave loss measurements have been reported for Nb-nucleated Ta films prior to this study. We compare resonators patterned from Ta films grown at high temperature (500 °C) and films nucleated at room temperature, in order to understand the impact of crystalline order on quantum coherence. In both cases, films grew with Al2O3 (001) || Ta (110) indicating that the epitaxial orientation is independent of temperature and is preserved across the Nb/Ta interface. We use conventional low-power spectroscopy to measure two level system (TLS) loss, as well as an electric-field bias technique to measure the effective dipole moments of TLS in the surfaces of resonators. In our measurements, Nb-nucleated Ta resonators had greater loss tangent (1.5 +/- 0.1 x 10^-5) than non-nucleated (5 +/- 1 x 10^-6) in approximate proportion to defect densities as characterized by X-ray diffraction (0.27 ° vs 0.18 ° [110] reflection width) and electron microscopy (30 nm vs 70 nm domain size). The dependence of the loss tangent on domain size indicates that the development of more ordered Ta films is likely to lead to improvements in qubit coherence times. Moreover, low-temperature alpha-Ta epitaxy may enable the growth of new, microstate-free heterostructures which would not withstand high temperature processing.

Tantalum Nitride Thin Film with a Nearly Zero Temperature Coefficient of Resistance Synthesized by Magnetron Co-Sputtering

Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

Effects of nitrogen composition on the resistivity of reactively sputtered TaN thin films

Influence of nitrogen concentration on electrical, mechanical, and structural properties of tantalum nitride thin films prepared via DC magnetron sputtering

Fabrication of tantalum silicate films with low TCR and low resistivity by magnetron sputtering

Reactive sputter deposition and properties of TaxN thin films

Microstructure and Thermal Diffusivity Investigations of RF-Sputtered Tantalum Nitride Films

Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering

Electronic, Optical, and Epsilon Near-Zero Response in Magnetron-Sputtered Tantalum Oxynitride Thin Films

Characteristics of Tantalum Oxynitride Films Prepared by Rf Magnetron Sputtering

Deposition of tantalum nitride films as the absorption load resistor for microwave power standard chips

Ion-beam Assisted Sputtering of Titanium Nitride Thin Films

Characterization and In-situ Monitoring of Sub-stoichiometric Adjustable Tc Titanium Nitride Growth

Effect of nitrogen concentration to the structural, chemical and electrical properties of tantalum zirconium nitride films

Tribological Properties of Ta‐C‐N and Ta‐N Thin Films

Fabrication of superconducting tantalum nitride thin films using infra-red pulsed laser deposition

Growth Mechanisms of TaN Thin Films Produced by DC Magnetron Sputtering on 304 Steel Substrates and Their Influence on the Corrosion Resistance

Study of optical and electrical properties of TiN thin films prepared by cathodic ion sputtering

Superconducting TiN films grown by directional reactive evaporation

Influence of room-temperature oxidation on stability and performance of reactively sputtered TaN thin films for high-precision sheet resistors

Two-Level Systems in Nucleated and Non-Nucleated Epitaxial alpha-Tantalum films