Preparation and Properties Characterization of Gradient Alpha-Ta(N)/Tan Bi-Layer Diffusion Barrier

Liu Chunhai,Luo Hong,Jin Yongzhong,Song Zhongxiao,Chen Shunli,Wang Yuan,An Zhu,Liu Ming
DOI: https://doi.org/10.3969/j.issn.1002-185x.2012.10.035
2012-01-01
Abstract:An ultra-low nitrogen atmosphere strategy of magnetron sputtering deposition with dynamic regulation of sputtering atmosphere was developed to prepare gradient alpha-Ta(N)/TaN bi-layer films, which have lower resistivity and high thermal stabilization. This deposition method can avoid effectively the high resistivity of bi-layer barrier films resulted from the N integration and the introduction of heterogeneous elements for the transformation of alpha-Ta phase. X-ray diffraction spectra (XRD), Four-point probe (FPP) measurement and Transmission electron microscopy (TEM) were used for characterization of the film microstructure. The results show that the as-deposited gradient alpha-Ta(N)/TaN bi-layer films have lower resistivity and good crystallinity, and the gradient alpha-Ta(N)/TaN bi-layer films have good structure stability even annealed at 600 degrees C for 60 min in vacuum.
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