Abstract:The fabrication of oxide-based p-n heterojunctions that exhibit high rectification performance has been difficult to realize using standard manufacturing techniques that feature mild vacuum requirements, low thermal budget processing, and scalability. Critical bottlenecks in the fabrication of these heterojunctions include the narrow processing window of p-type oxides and the charge-blocking performance across the metallurgical junction required for achieving low reverse current and hence high rectification behavior. The overarching goal of the present study is to demonstrate a simple processing route to fabricate oxide-based p-n heterojunctions that demonstrate high on/off rectification behavior, a low saturation current, and a small turn-on voltage. For this study, room-temperature sputter-deposited p-SnOx and n-InGaZnO (IGZO) films were chosen. SnOx is a promising p-type oxide material due to its monocationic system that limits complexities related to processing and properties, compared to other multicationic oxide materials. For the n-type oxide, IGZO is selected due to the knowledge that postprocessing annealing critically reduces the defect and trap densities in IGZO to ensure minimal interfacial recombination and high charge-blocking performance in the heterojunctions. The resulting oxide p-n heterojunction exhibits a high rectification ratio greater than 103 at ±3 V, a low saturation current of ∼2 × 10-10 A, and a small turn-on voltage of ∼0.5 V. In addition, the demonstrated oxide p-n heterojunctions exhibit excellent stability over time in air due to the p-SnOx with completed reaction annealing in air and the reduced trap density in n-IGZO.

Preparation of p-NiO/n-SiC heterojunction on 4H-SiC substrate

A facile way for fabrication of nano-sized p-NiO/n-SiC heterojunction using sol–gel technique

Junction Properties of Nitrogen-Doped Zno Thin Films

Fabrication and characterization of CuAlO2/ 4H–SiC heterostructure on 4H–SiC (0001)

Fabrication and Investigation of NiOx MSM Structure on 4H-Sic Substrate

Numerical Investigation on Hole-Injection Characteristics of NiO/SiC Heterojunction

Study on the Preparation of InN Films under Different Substrates and Nitrogen-Argon Flow Ratios and the Effect of Operating Temperature on Carrier Transport in P-Nio/n-inn Heterojunctions

Ohmic Contact Properties of Ni/C Film on 4H-Sic

Preparation of InN films at different substrate temperatures and the effect of operating temperatures on the carrier transmission characteristics of p-NiO/n-InN heterojunction

Synthesis and Electrical Properties of p + -Si/n-ZnO Nanowires Heterojunction

Improved Adhesion and Interface Ohmic Contact on N-Type 4H-Sic Substrate by Using Ni/Ti/Ni

Determination of the Interface Band Alignment of NiO/4H-SiC Heterojunction for Photodetector Application

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC

High-quality crystalline NiO/β-Ga2O3 p–n heterojunctions grown by the low-cost and vacuum-free mist-CVD for device applications

Fabrication and Characterization of the Heterojunction Diode from Ternary Ni1-xCoxO Thin Films on n-Si Substrates by Sol-Gel Method

Fabrication and Electrical Characterization of Nanocrystalline ZnO/Si Heterojunctions

Preparation of AlN thin film and the impacts of AlN buffer layer on the carrier transport properties of p-NiO/n-InN heterojunction by magnetron sputtering

Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

Ohmic Contacts of 4H-Sic on Ion-Implantation Layers

High-Performance Oxide-Based p-n Heterojunctions Integrating p-SnO x and n-InGaZnO

Study of Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Substrates by CVD