Catalytic Graphitization and Ohmic Contact Formation on 4H–sic
WJ Lu,WC Mitchel,GR Landis,TR Crenshaw,WE Collins
DOI: https://doi.org/10.1063/1.1562737
IF: 2.877
2003-01-01
Journal of Applied Physics
Abstract:Electrical contact properties and graphitic structures of metal/carbon/4H–SiC structures are investigated. Metals studied include Ni, Co, Cr, NiCr, Ti, W, Mo, Al, and Au. Ohmic contacts are formed on Ni/C, Co/C, Cr/C, and NiCr/C films on 4H–SiC with n-type, C-face, and a doping concentration of 1.8×1019 cm−3 . Only Ni/C and Co/C films exhibit Ohmic contact behavior on SiC with n-type, Si-face, and a doping concentration of 1.6×1018 cm−3. Ni and Co are well known as excellent graphitization catalysts. Raman spectra show that the formation of graphitic carbon is related to the formation of Ohmic contacts in the annealed metal/carbon/SiC structures. Generally accepted catalytic graphitization mechanisms are applied to explain the scanning electron microscopy images, which demonstrate a relationship between the catalytically reacted morphology and Ohmic contact behavior. This study provides evidence that the metals with better catalytic graphitization activities form better Ohmic contacts on metal/carbon/SiC structures.