A facile way for fabrication of nano-sized p-NiO/n-SiC heterojunction using sol–gel technique

Chun-Lan Chen,Hong-bin Pu,Min Wang,Xi Wang,Yuan Zang,Chun-Yan Gao
DOI: https://doi.org/10.1016/j.spmi.2019.106251
IF: 3.22
2019-01-01
Superlattices and Microstructures
Abstract:In this work, nanostructured nickel oxide (NSNiO) film was fabricated on 4H-SiC by using a sol–gel spin-coating process and under the optimized calcine temperature to form NSNiO/4H-SiC p-n heterojunction. The deposited film consisted of nano-sized particles with homogeneous distribution, whose diffraction peaks coincide with face-centered cubic crystalline diffraction patterns of NiO. For NSNiO film, the optical band gap was calculated as 3.75 eV, and the conductive type was analyzed to be p-type. The current density-voltage characteristic of the NSNiO/SiC p-n heterojunction showed a typical rectification behavior with a turn-on voltage of 1.16 V and a rectification ratio of about 103 at ±1.5V in the dark. The results suggest that NiO/SiC structure can pave way for applying in the field of power and photoelectric devices.
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