Abstract:As one of potential photoelectric material, zinc oxide attracted a lot of attentions recently. Such as, its wide band gap (3.37 eV) and high excitonic binding energy of 60 meV make ZnO as a good candidate for developing short wavelength optical devices. Furthermore, the p-doping ZnO can be produced and the p-n structure of ZnO can be formed on the silicon substrate, both of characteristics make ZnO to be compatible with Si-based integrated circuits. Hence, ZnO film has wider application in opto-electronic industries.ZnO films can be easily prepared by reactive sputtering. techniques However, the surface state which caused by damages of bulk silicon surface and lattice mismatch impurity which contaminated in fabrication procedure can produce the level of surface state and deep level in heterojunction. Those levels affect the carries a lot.Generally the level formed by defects can reduce illuminant efficiency, producing non-radiation recombined, but deep level can also become efficient illuminant centre using wide band gap materials. So it is deserved to study deeply of the behavior of ZnO/p-Si heterojunction interface state. The high frequency C-V character can be used to measure the charge of space charge region varied with the voltage variation, this effect of capacitance can be described by differential capacitance. The C-V measurement supplied an important way to research the characteristics of heterojunction. With the help of the measuring C-V and I-V character, we can easily obtain the evidence that interface impurity state and defects in ZnO ∶Al/p-Si interface can have largely influence on electricity property of the heterojunction. We also found it was very useful to reduce the interface state (using) annealing procedure. It was clearly to see that the sample annealed in 800 ℃ had the larger illuminant efficiency.Whether annealed or not, the sample grown by RF sputtering technique can form an abrupt heterojunction, but the character of potential was not the same. As a large number of deep level and surface state level were in interfaces, the C-V curve of sample which was not annealed was aberrance and the I-V curve was exponential with reversing bias voltage. In condition of annealing under 800 ℃, we can observe the influence of interface state was eliminated, and improved rectifying characteristic of heterojunction.

Fabrication and characterization of CuAlO2/ 4H–SiC heterostructure on 4H–SiC (0001)

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Heterojunction Diodes Formed Using Thin-Film-C Containing Polycrystalline Diamond and Si

Preparation of p-NiO/n-SiC heterojunction on 4H-SiC substrate

Contact Characteristics of ZnO :Al/p-Si

Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

A facile way for fabrication of nano-sized p-NiO/n-SiC heterojunction using sol–gel technique

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Electrical and Thermal Property of Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer

Investigations of In2O3 Added SiC Semiconductive Thin Films and Manufacture of a Heterojunction Diode

Interfacial Chemistry and Energy Band Alignment of TiAlO on 4H-Sic Determined by X-ray Photoelectron Spectroscopy

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode

Rectifying and photovoltage properties of ZnO:Al/p-Si heterojunction

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD

Analysis of electronic structure and properties of Ga2O3/CuAlO2 heterojunction

Enhanced Electrical Properties of 4H-Sic/al2o3 Heterojunction by PEALD in Situ NH3-plasma Passivation

Photoluminescence Study of Epitaxial 4H-Sic Grown on AlN/Si ( 100 ) Complex Substrate by Chemical Vapor Deposition

Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer

Fabrication and Characterization of the Heterojunction Diode from Ternary Ni1-xCoxO Thin Films on n-Si Substrates by Sol-Gel Method

Characteristics of grafted monocrystalline Si/ β -Ga2O3 p – n heterojunction