Abstract:High-quality ZnO films were grown on Si(1 0 0) substrates with low-temperature (LT) ZnO buffer layers by an electron cyclotron resonance (ECR)-assisted molecular-beam epitaxy (MBE). In order to investigate the optimized buffer layer temperature, ZnO buffer layers of about 1.1 μm were grown at different growth temperatures of 350, 450 and 550 °C, followed by identical high-temperature (HT) ZnO films with the thickness of 0.7 μm at 550 °C. A ZnO buffer layer with a growth temperature of 450 °C (450 °C-buffer sample) was found to greatly enhance the crystalline quality of the top ZnO film compared to others. The root mean square (RMS) roughness (3.3 nm) of its surface is the smallest, compared to the 350 °C-buffer sample (6.7 nm), the 550 °C-buffer sample (7.4 nm), and the sample without a buffer layer (6.8 nm). X-ray diffraction (XRD), photoluminescence (PL) and Raman scattering measurements were carried out on these samples at room temperature (RT) in order to characterize the crystalline quality of ZnO films. The preferential c-axis orientations of (0 0 2) ZnO were observed in the XRD spectra. The full-width at half-maximum (FWHM) value of the 450 °C-buffer sample was the narrowest as 0.209°, which indicated that the ZnO film with a buffer layer grown at this temperature was better for the subsequent ZnO growth at elevated temperature of 550 °C. Consistent with these results, the 450 °C-buffer sample exhibits the highest intensity and the smallest FWHM (130 meV) of the ultraviolet (UV) emission at 375 nm in the PL spectrum. The ZnO characteristic peak at 438.6 cm−1 was found in Raman scattering spectra for all films with buffers, which is corresponding to the E2 mode.

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The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Structural Characteristics of ZnO Epilayer Grown on Si Substrates

Comparisons of Structural and Optical Properties of ZnO Films Grown on Sapphire and Si(001)

Characterizations of Cubic ZnMgO Films Grown on Si(111) at Low Substrate Temperature

ZnO Growth on Si with Low-Temperature ZnO Buffer Layers by ECR-assisted MBE

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ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

Optical studies of ZnO quantum dots grown on Si(001)

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Characterization of ZnO Thin Films Prepared on SIO2/Si Substrates

Optical studies of ZnO quantum dots grown on Si(0 0 1)

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Raman and Photoluminescence of Zno Films Deposited on Si(111) Using Low-Pressure Metalorganic Chemical Vapor Deposition