Abstract:The crystal structure as well as electrical properties of Y-doped HfO2 thin films were evaluated. The thin films were produced by co-sputtering with Y and Hf metal targets in an argon/oxygen atmosphere. A 10 nm-thick HfO2 thin film with 1.5 at.% yttrium content deposited at 200 °C and annealed at 850 °C for 40 s in an inert nitrogen atmosphere shows excellent ferro-electricity with a significant remnant polarization (Pr∼20 μC/cm2) and a low leakage current density (about 10−6 A/cm2 at 1 MV/cm). The crystal structure and ferroelectric properties of Y-doped HfO2 thin films exhibit strong temperature dependence. The ferroelectric phase (orthorhombic phase) fraction was observed to be suppressed in favor of the para-electric phase (monoclinic phase) with increasing deposition temperature through analyses grazing incidence X-ray diffraction and high resolution transmission electron microscopy. Through the analysis of polarization and current density characteristics, a correlation between decreasing remnant polarization and a greater leakage current density was revealed as the deposition temperature was increased. The origin of the degradation of the ferro-electricity of Y-doped HfO2 films with elevated deposition temperature was attributed to the formation of m-phase which was unfavorable for promoting transition to the ferroelectric o-phase during post-deposition annealing.

Ferroelectric Yttrium Doped Hafnium Oxide Films from All-Inorganic Aqueous Precursor Solution

Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 based thin films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Optimizing Annealing Process for Ferroelectric Y‐Doped HfO 2 Thin Films by All‐Inorganic Aqueous Precursor Solution

Ferroelectricity in hafnium oxide thin films

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films

(001)-oriented Sr:HfO2 ferroelectric films deposited by a flexible chemical solution method

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

Investigation of temperature-dependent ferroelectric properties of Y-doped HfO2 thin film prepared by medium-frequency reactive magnetron co-sputtering

Effect of the Hf content on the microstructure and ferroelectric properties of Hf x Zr 1− x O 2 thin films using an all-inorganic aqueous precursor solution

Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

Control of intrinsic ferroelectricity and structural phase in pure HfO2 films via crystalline orientation

Ferroelectricity in the Al doped HfO2

Importance of tailoring the thickness of SiO2 interlayer in the observation of ferroelectric characteristics in yttrium doped HfO2 films on silicon

Doping Ferroelectric Hafnium Oxide by in-Situ Precursor Mixing

Ferroelectric Properties of Gradient Doped Y2O3:HfO2 Thin Films Grown by Pulsed Laser Deposition

Ferroelectric properties of pure ZrO2 thin films by chemical solution deposition

Characterization Upon Potential Properties of Hfo2 Stabilized by Y2o3 Films As Cubic Phase