(001)-oriented Sr:HfO2 ferroelectric films deposited by a flexible chemical solution method

Miguel-Ángel Badillo-Ávila,Sepide Taleb,Brenda Carreno-Jiménez,Taraneh Mokabber,Rebeca Castanedo-Pérez,Gerardo Torres-Delgado,Mónica Acuautla,Beatriz Noheda

DOI: https://doi.org/10.26434/chemrxiv-2023-8cxnf

2023-11-22

Abstract:Remnant polarization values of ferroelectric HfO2-based films depend on proper control of polar orthorhombic phase crystallization and the orientation of the polar domains. Most of the best quality films reported so far are (111)-oriented. While the largest polarization is expected in (001)-oriented films, with the polar axis out of the plane, such orientation is far less common. This paper demonstrates that highly (001)/(010)-oriented heterostructures of Sr:HfO2 on Pt(111)-buffered Si, can be attained in layered films deposited by a newly reported chemical solution deposition route. The oriented films display the short c-axis out-of-plane, giving place to a longer a lattice in-plane. By tailoring the duration of rapid thermal processing, such oriented films produce highly ferroelectric, leakage-free capacitors. After wake-up cycling, a remnant polarization of 17 µC/cm2, which is the highest reported for this dopant and technique, was achieved. Even though optimization is still needed to improve the electrical cyclability, our facile approach produces high-k, highly oriented Sr:HfO2 films, through chemical deposition and annealing, and shows that crystal orientations and phase purity of HfO2-based films can be further optimized by cost-effective chemical methods.

Chemistry

What problem does this paper attempt to address?

This paper mainly studies the (001) oriented Sr:HfO2 ferroelectric thin films prepared by chemical solution deposition (CSD) method. Typically, (111) oriented HfO2 thin films have a higher remnant polarization value, but (001) oriented films, with polarization axis perpendicular to the plane, are rarer and more advantageous. The researchers demonstrated a new chemical solution deposition route to obtain highly (001)/(010) oriented Sr:HfO2 heterostructures and deposited them on Pt-buffered Si. After rapid thermal annealing, these films exhibited high ferroelectricity and leakage-free capacitor performance. A high remnant polarization value of 17.3 µC/cm² was achieved after wake-up cycling, which is the highest reported value using this dopant and CSD technique. Although further optimization is still needed to improve the electrical cycling stability, this method demonstrates the potential of controlling HfO2-based thin film crystal orientation and purity through chemical deposition and annealing, competing with other techniques such as atomic layer deposition.