Abstract:In the quest for ultra-high-efficiency silicon solar cells, optimising surface passivation has emerged as a critical pathway to minimise losses and enhance device performance. Recent breakthroughs in aluminium oxide (AlO x ) passivation show an interface to Si with low interface defect density and high negative charge density after activation annealing at 400–450 °C, enabling low surface recombination velocities. The formation of an interfacial SiO x layer has been recognised as a key factor. In this study, we present an in-depth investigation of a SiO x /AlO x /SiN x nanolayer stack interface with Si, where the SiO x is wet chemically grown. By varying the AlO x deposition from 5 to 40 ALD cycles, we observed a reduction in interface defect density, indicating the presence of negatively charged hydrogen in the AlO x layer. We reveal a distinctly different interface between Si and nanolayer stacks with or without AlO x . Activation annealing significantly reduced recombination losses for stacks with AlO x , attributed to increased charge density and decreased carrier capture velocity at the valence band-tail. We find lower electron capture rates in nanolayer stacks containing AlO x , suggesting effective passivation of donor states by negatively charged hydrogen. Additionally, the formation of new acceptor states was detected by an increase in hole capture velocity at the interface after annealing. Electron energy loss spectroscopy (EELS) identified an Al:SiO x N y layer of ∼2.5 nm thick with excess oxygen content and a mixture of tetrahedral and octahedral coordinated Al, likely contributing to the formation of acceptor defects and suggest an intrinsic link between the chemical and field-effect passivation.

Reducing Potential Induced Degradation of Silicon Solar Cells by Using a Liquid Oxidation Technique

Potential‐free Sodium‐induced Degradation of Silicon Heterojunction Solar Cells

Suppressing Charge Recombination and Ultraviolet Light Degradation of Perovskite Solar Cells Using Silicon Oxide Passivation

Boost Organic‐Silicon Hybrid Solar Cell Performances with a Facile and Cost‐effective Sub‐3 nm Interface Control Method

Oxidation Of Silicon Surface With Atomic Oxygen Radical Anions

UV-OZONE Treatment for Suppressing Surface Damages on Silicon Solar Cells

Oxide-nitride nanolayer stacks for enhanced passivation of p-type surfaces in silicon solar cells

Study on the Thermal Stability of Molybdenum Oxide‐Passivated Silicon Solar Cells

A novel approach to reduce the oxygen content in Monocrystalline silicon by Czochralski method

Application of SiO2 Passivation Technique in Mass Production of Silicon Solar Cells

Manipulating Oxidation of Silicon with Fresh Surface Enabling Stable Battery Anode

SiO2 Passivation Layer Grown by Liquid Phase Deposition for Silicon Solar Cell Application

An Industrial Solution to Light-Induced Degradation of Crystalline Silicon Solar Cells

Low Oxygen Content MoOx and SiOx Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

UV-Ozone Oxide layer for Junction Passivation and Passivating Contact Process of Silicon Solar Cells

Conductive layer protected and oxide catalyst-coated thin-film silicon solar cell as an efficient photoanode

SURFACE PASSIVATION OF THERMAL OXIDATION OF SiO2 FILM ON INFLUENCE TO PERFORMANCE OF CRYSTALLINE SILICON SOLAR CELLS

Engineering molecular regulation for SiOx with long-term stable cycle and high Coulombic efficiency as lithium-ion battery anodes

Effect of surface oxidation on the performance of silicon nanoparticles

Improved Efficiency and Stability of Organic Solar Cells by Interface Modification Using Atomic Layer Deposition of Ultrathin Aluminum Oxide

Boosting the initial coulombic efficiency for SiO anodes through component controlling and microcrystalline size limiting regulated by carbon layer