Short wavelength photons destroying Si‐H bonds and its influence on high efficiency silicon solar cells and modules
Haoran Ye,Shenglei Huang,Cheng Qian,Zehua Sun,Yang Chen,Xinyao Song,Yutong Zhang,Na Wang,Yu Hu,Yanyun Yang,Lei Li,Zhu Ma,Tao Chen,Wenzhu Liu,Jian Yu
DOI: https://doi.org/10.1002/solr.202300334
IF: 9.1726
2023-06-01
Solar RRL
Abstract:Photons of varying wavelengths exert substantial effects on silicon heterojunction (SHJ) solar cells. Collaborative research previously established that light soaking with long‐wavelength photons can activate boron doping in hydrogenated amorphous silicon (a‐Si:H), thereby augmenting cell efficiency. This study extends this investigation, exploring the effects of short‐wavelength photons on a‐Si:H layers, SHJ solar cells, and modules. The ultraviolet A (UVA) light with the wavelengths peak of 365 nm can disrupt Si‐H bonds, resulting in a notable reduction in hydrogen content within both intrinsic and doped a‐Si:H films, and the deterioration of deteriorated interface passivation. Following exposure to 60 kWh/m2 of UVA light, both cell efficiency and module power output decrease significantly, primarily attributable to the degradation of open‐circuit voltage and fill factor. As a feasible solution, the application of a light soaking process or the implementation of UV band cut‐off module encapsulants can effectively mitigate the loss induced by UV irradiation, thereby ensuring the long‐term operation of SHJ solar cells and modules. This research contributes to a deeper understanding of UV‐induced performance changes in a‐Si:H film and its degradation mechanism for SHJ solar cells and provides a viable strategy to counter UV‐induced degradation in high‐efficiency SHJ solar cells and modules. This article is protected by copyright. All rights reserved.
energy & fuels,materials science, multidisciplinary