Abstract:In this paper, the ultrafast dynamics of spin relaxation and recombination of photoexcited carriers has been studied in (001) GaAs quantum wells using a time-resolved pump-probe absorption spectroscopy under a nearly resonant excitation of heavy-hole excitons. It is found that the spin polarization of carriers influences both absorption saturation of linear polarized light and recombination dynamics of carriers. Pump fluence dependence of the ultrafast dynamics of spin relaxation and recombination of carriers is further studied, which shows that the effect of spin polarization on linearly polarized absorption saturation is reduced with lowering pump fluence. Spin-polarization-dependent absorption saturation effect can be ignored only as the pump fluence is weak. However, spin-polarization dependence of recombination dynamics is presented in turn at low pump fluence. Our analysis shows that such dependence originates from the spin-polarization dependence of the density of excitons formed in the excited carriers because recombination time constants of excitons and free carriers are very different so that the ratio of exciton density to free carrier density can influence the recombination dynamics. The spin-polarization dependence of ultrafast recombination dynamics of photoexcited carriers implies that the recombination time constant in the calculation of spin relaxation time from spin relaxation dynamics should be the recombination time of spin-polarized carriers, rather than the recombination lifetime of non-spin-polarized carriers as done currently. Exciton density is estimated based on 2D mass action law, which agrees very well with our experimental results. The good agreement between theoretical calculation and experimental results reveals that the effect of Coulomb screening on the formation of excitons may be ignored for a lower excited carrier density.

Spin-polarization Dependent Carrier Recombination Dynamics and Spin Relaxation Mechanism in Asymmetrically Doped (110) N-Gaas Quantum Wells

Effects of Spin Polarization on Absorption Saturation and Recombination Dynamics of Carriers in (001) Gaas Quantum Wells

Spin Dynamics in GaN/Al0.1Ga0.9N Quantum Well with Complex Band Edge Structure

Electron Spin Coherence and Effect of Spin Polarization on Electron Relaxation Dynamics in Gaas

Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects

Carrier Lifetime and Electron Spin Relaxation Time in (110)-Oriented GaAs–AlGaAs Quantum-Well Micro-Posts

Picosecond Spin Relaxation in Low-Temperature-Grown Gaas

Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures

Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells

Spin relaxation in a zinc-blende (110) symmetric quantum well with delta-doping

Generating Strong Electron Spin Polarization at Room Temperature in GaNAs Via Spin-Dependent Recombination

Differential Screening Technology in the Service of Ovarian Biology

Strongly temperature-dependent recombination kinetics of a negatively charged exciton in asymmetric quantum dots at 1.55 μm

Nanosecond recombination lifetimes and spin relaxation times in (110) InGaAs/AlGaAs quantum wells at room temperature

Self-Pulsation Dynamics in GaAs/AlGaAs Quantum Cascade Lasers

Spin relaxation time enhancement induced by polarization field screening in an InGaN/GaN quantum well

Photoluminescence of double quantum wells: asymmetry and excitation laser wavelength effects

Spin Relaxation in Submonolayer and Monolayer InAs Structures Grown in a GaAs Matrix

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure

Spin States in InAs/AlSb/GaSb Semiconductor Quantum Wells