Abstract:In this paper, the ultrafast dynamics of spin relaxation and recombination of photoexcited carriers has been studied in (001) GaAs quantum wells using a time-resolved pump-probe absorption spectroscopy under a nearly resonant excitation of heavy-hole excitons. It is found that the spin polarization of carriers influences both absorption saturation of linear polarized light and recombination dynamics of carriers. Pump fluence dependence of the ultrafast dynamics of spin relaxation and recombination of carriers is further studied, which shows that the effect of spin polarization on linearly polarized absorption saturation is reduced with lowering pump fluence. Spin-polarization-dependent absorption saturation effect can be ignored only as the pump fluence is weak. However, spin-polarization dependence of recombination dynamics is presented in turn at low pump fluence. Our analysis shows that such dependence originates from the spin-polarization dependence of the density of excitons formed in the excited carriers because recombination time constants of excitons and free carriers are very different so that the ratio of exciton density to free carrier density can influence the recombination dynamics. The spin-polarization dependence of ultrafast recombination dynamics of photoexcited carriers implies that the recombination time constant in the calculation of spin relaxation time from spin relaxation dynamics should be the recombination time of spin-polarized carriers, rather than the recombination lifetime of non-spin-polarized carriers as done currently. Exciton density is estimated based on 2D mass action law, which agrees very well with our experimental results. The good agreement between theoretical calculation and experimental results reveals that the effect of Coulomb screening on the formation of excitons may be ignored for a lower excited carrier density.

Nanosecond recombination lifetimes and spin relaxation times in (110) InGaAs/AlGaAs quantum wells at room temperature

Carrier Lifetime and Electron Spin Relaxation Time in (110)-Oriented GaAs–AlGaAs Quantum-Well Micro-Posts

Picosecond Spin Relaxation in Low-Temperature-Grown Gaas

Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Spin Dynamics in GaN/Al0.1Ga0.9N Quantum Well with Complex Band Edge Structure

Spin Lifetime Ininasepitaxial Layers Grown Ongaas

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Reliability enhancement of InGaAs/AlGaAs quantum-well lasers on on-axis Si (001) substrate

Ultrafast carrier relaxation dynamics of photoexcited GaAs and GaAs/AlGaAs nanowire array

Exciton Localization in In0.15ga0.85as/Gaas Quantum Wire Structures Grown on (553)B-Oriented Gaas Substrate

Spin relaxation in a zinc-blende (110) symmetric quantum well with delta-doping

Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures

Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects

Subpicosecond Nonlinear Absorption Recovery Dynamics of Low-Temperature-grown In0.53Ga0.47As/In0.52Al0.48As Multiple Quantum Well P-I-n Structures

Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature.

Effects of Spin Polarization on Absorption Saturation and Recombination Dynamics of Carriers in (001) Gaas Quantum Wells

Temperature Dependencies of Radiative and Nonradiative Carrier Lifetimes in InGaAs Quantum Well-Dots

Recombination Dynamics of Excitons in Zno/Znmgo Multiple Quantum Wells Grown on Silicon Substrate

Slow Exciton Spin Relaxation in Single Self-Assembled In1-Xgaxas/Gaas Quantum Dots

Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots