Abstract:We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with an ${\mathrm{Al}}_{0.4}{\mathrm{Ga}}_{0.6}\mathrm{As}$ barrier due to the D'yakonov-Perel' mechanism from nearly $20\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ to room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron-acoustic-phonon, the electron-longitudinal-optical-phonon, the electron-nonmagnetic-impurity, and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno et al. [Physica E (Amsterdam) 6, 817 (2000)] over the whole temperature regime (from $20\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density, and well width. We predict a peak solely due to the Coulomb scattering in the spin relaxation time at low temperature $(l50\phantom{\rule{0.3em}{0ex}}\mathrm{K})$ in samples with low electron density (e.g., density less than $1\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) but high mobility. This peak disappears in samples with high electron density (e.g., $2\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high-temperature case predicted.

Slow Exciton Spin Relaxation in Single Self-Assembled In1-Xgaxas/Gaas Quantum Dots

Atomistic Pseudopotential Theory of Spin Relaxation in Self-Assembled In1−xGaxAs/GaAs Quantum Dots at Zero Magnetic Field

Exciton spin relaxation in single semiconductor quantum dots

Spin Relaxation in Gaas Quantum Dots

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Parametric Properties of the Electron Spin Relaxation in InAs Quantum Dots

Spin relaxations in semiconductor quantum dots

Theory of Excitons in Cubic III-V Semiconductor GaAs, InAs and GaN Quantum Dots: Fine Structure and Spin Relaxation

Tuning of the Hole Spin Relaxation Time in Single Self-Assembled In1−xGaxAs/GaAs Quantum Dots by Electric Field

Localized and Free Exciton Spin Relaxation Dynamics in GaInNAs∕GaAs Quantum Well

Exciton dynamics in self-organized InAs/GaAs quantum dots

Spin Relaxation in Charged Quantum Dots Measured by Coherent Optical Phase Modulation Spectroscopy

Exciton Spin Relaxation Time in Quantum Dots Measured by Continuous-Wave Photoluminescence Spectroscopy

Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot

Electron Spin Relaxation in Cubic Gan Quantum Dots: Perturbation Theory and Exact Diagonalization Study

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Optical Transition and Carrier Relaxation in Self-Assembled InAs/GaAs Quantum Dots with InAlAs and InGaAs Combination Cap Layer by Resonant Excitation

Optical alignment and polarization conversion of neutral exciton spin in individual InAs/GaAs quantum dots

Direct Measurement of Spin Dynamics in Inas/Gaas Quantum Dots Using Time-Resolved Resonance Fluorescence

Spin Relaxation in N-Type Gaas Quantum Wells from A Fully Microscopic Approach

Measurements of a Fast Nuclear-Spin Dynamics in a Single InAs Quantum Dot with Positively Charged Exciton