Abstract:Phonon-induced orbital and spin relaxation rates of single electron states in lateral single and double quantum dots are obtained numerically for realistic materials parameters. The rates are calculated as a function of magnetic field and interdot coupling, at various field and quantum dot orientations. It is found that orbital relaxation is due to deformation potential phonons at low magnetic fields, while piezoelectric phonons dominate the relaxation at high fields. Spin relaxation, which is dominated by piezoelectric phonons, in single quantum dots is highly anisotropic due to the interplay of the Bychkov-Rashba and Dresselhaus spin-orbit couplings. Orbital relaxation in double dots varies strongly with the interdot coupling due to the cyclotron effects on the tunneling energy. Spin relaxation in double dots has an additional anisotropy due to anisotropic spin hot spots which otherwise cause giant enhancement of the rate at useful magnetic fields and interdot couplings. Conditions for the absence of the spin hot spots in in-plane magnetic fields (easy passages) and perpendicular magnetic fields (weak passages) are formulated analytically for different growth directions of the underlying heterostructure. It is shown that easy passages disappear (spin hot spots reappear) if the double dot system loses symmetry by an xy-like perturbation.

What problem does this paper attempt to address?

This paper aims to explore the physical mechanisms of orbital and spin relaxation in single and coupled quantum dots. Specifically, the author attempts to solve the following key issues: 1. **Understanding the changes in orbital and spin relaxation rates under different conditions**: The paper studies the orbital and spin relaxation rates in single and coupled quantum dots under transverse (in - plane) and perpendicular magnetic fields, as well as under different interdot coupling conditions. How do these relaxation rates change with the magnetic field strength, the inter - dot spacing and other parameters? 2. **Determining the dominant relaxation mechanisms**: Through numerical calculations and theoretical analysis, the author determines which phonons (such as deformation - potential phonons and piezoelectric phonons) dominate the orbital and spin relaxation processes under low - and high - magnetic - field conditions respectively. For example, under a low magnetic field, orbital relaxation is mainly caused by deformation - potential phonons, while under a high magnetic field it is mainly caused by piezoelectric phonons. 3. **Analyzing the influence of spin hot spots**: The paper pays special attention to the spin hot - spot phenomenon, that is, the phenomenon where the spin relaxation rate increases significantly under certain specific conditions (such as specific magnetic fields and inter - dot spacings). The author analyzes in detail the formation conditions of spin hot spots and proposes a scheme to avoid spin hot spots under certain geometric arrangements, which is of great significance for quantum information processing. 4. **Exploring the influence of different material parameters on relaxation rates**: The author also studies the specific influence of different material parameters (such as effective mass, g - factor, etc.) on orbital and spin relaxation rates, in order to provide theoretical guidance for experimental design. In summary, through systematic research, this paper reveals the complex mechanisms of orbital and spin relaxation in single and coupled quantum dots and provides important theoretical basis for future experiments and applications.

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