Abstract:We perform a full microscopic investigation on the spin relaxation in $n$-type (001) GaAs quantum wells with an ${\mathrm{Al}}_{0.4}{\mathrm{Ga}}_{0.6}\mathrm{As}$ barrier due to the D'yakonov-Perel' mechanism from nearly $20\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ to room temperature by constructing and numerically solving the kinetic spin Bloch equations. We consider all the relevant scattering such as the electron-acoustic-phonon, the electron-longitudinal-optical-phonon, the electron-nonmagnetic-impurity, and the electron-electron Coulomb scattering to the spin relaxation. The spin relaxation times calculated from our theory with a fitting spin splitting parameter are in good agreement with the experimental data by Ohno et al. [Physica E (Amsterdam) 6, 817 (2000)] over the whole temperature regime (from $20\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$). The value of the fitted spin splitting parameter agrees with many experiments and theoretical calculations. We further show the temperature dependence of the spin relaxation time under various conditions such as electron density, impurity density, and well width. We predict a peak solely due to the Coulomb scattering in the spin relaxation time at low temperature $(l50\phantom{\rule{0.3em}{0ex}}\mathrm{K})$ in samples with low electron density (e.g., density less than $1\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) but high mobility. This peak disappears in samples with high electron density (e.g., $2\ifmmode\times\else\texttimes\fi{}{10}^{11}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$) and/or low mobility. The hot-electron spin kinetics at low temperature is also addressed with many features quite different from the high-temperature case predicted.

Atomistic Pseudopotential Theory of Spin Relaxation in Self-Assembled In1−xGaxAs/GaAs Quantum Dots at Zero Magnetic Field

Slow Exciton Spin Relaxation in Single Self-Assembled In1-Xgaxas/Gaas Quantum Dots

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Tuning of the Hole Spin Relaxation Time in Single Self-Assembled In1−xGaxAs/GaAs Quantum Dots by Electric Field

Exciton spin relaxation in single semiconductor quantum dots

Fast high-fidelity hole spin initialisation in a single quantum dot at zero magnetic field

Hole spin relaxation in semiconductor quantum dots

Spin Relaxation in Gaas Quantum Dots

Parametric Properties of the Electron Spin Relaxation in InAs Quantum Dots

Electron Spin Relaxation in Cubic Gan Quantum Dots: Perturbation Theory and Exact Diagonalization Study

Spin Relaxation in Charged Quantum Dots Measured by Coherent Optical Phase Modulation Spectroscopy

Spin Relaxation in an InAs Quantum Dot in the Presence of Terahertz Driving Fields

Hole Spin Relaxation in P-Type (111) Gaas Quantum Wells

Hole spin coherence in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths

Spin Relaxation In Diluted Magnetic Semiconductor Quantum Dots

Spin Relaxation in N-Type Gaas Quantum Wells from A Fully Microscopic Approach

Theory of Excitons in Cubic III-V Semiconductor GaAs, InAs and GaN Quantum Dots: Fine Structure and Spin Relaxation

Heavy-hole spin relaxation in quantum dots: Isotropic versus anisotropic effects

Magnetic-field dependence of spin-phonon relaxation and dephasing due to g-factor fluctuations from first principles

Spin Quantum Beats of Bright and Dark Excitonic States in Neutral Inas Quantum Dots

Orbital and spin relaxation in single and coupled quantum dots