Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices
Rigo A. Carrasco,Christian P. Morath,Perry C. Grant,Gamini Ariyawansa,Chad A. Stephenson,Clark N. Kadlec,Samuel D. Hawkins,John F. Klem,Eric A. Shaner,Elizabeth H. Steenbergen,Stephen T. Schaefer,Shane R. Johnson,Preston T. Webster
DOI: https://doi.org/10.1063/5.0047178
IF: 2.877
2021-05-14
Journal of Applied Physics
Abstract:Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design freedom to enable optimization of absorption and transport properties. Time-resolved photoluminescence measurements of InGaAs/InAsSb superlattice characterization- and doped device structures are reported from 77 to 300 K and compared to InAs/InAsSb. The low-injection photoluminescence decay yields the minority carrier lifetime, which is analyzed with a recombination rate model, enabling the determination of the temperature-dependent Shockley–Read–Hall, radiative, and Auger recombination lifetimes and extraction of defect energy levels and capture cross section defect concentration products. The Shockley–Read–Hall-limited lifetime of undoped InGaAs/InAsSb is marginally reduced from 2.3 to 1.4 <i>μ</i>s due to the inclusion of Ga; however, given that Ga improves the vertical hole mobility by a factor of >10×, a diffusion-limited InGaAs/InAsSb superlattice <i>nBn</i> could expect a lower bound of 2.5× improvement in diffusion length with significant impact on photodetector quantum efficiency and radiation hardness. At temperatures below 120 K, the doped device structures are Shockley–Read–Hall limited at 0.5 <i>μ</i>s, which shows promise for detector applications.
physics, applied