Transient Femtosecond Spectroscopy in GaAs/AlGaAs Multiquantum Wells

吴松江,王丹翎,蒋红兵,杨宏,龚旗煌,季亚林,陆卫

DOI: https://doi.org/10.3321/j.issn:1005-0086.2004.03.027

2004-01-01

Abstract:Ultrafast dynamic process in GaAs/AlGaAs quantum wells was studied by femtosecond white light pump-probe technique.Three distinct bleaching peaks in differential transmission spectrum were observed by the E 1-HH 1,E 1-HH 2 and E 2-HH 2 transitions.The pumped transition in GaAs/AlGaAs thin film was excited unresonantly by the strong laser,which cannot be well explained by the selection rules of Δn=2p.The peaks of the E 1-HH 2 and the E 2-HH 2 fall quickly because the electrons on the conduction band of E_1 and the holes on the valence band of HH 2 decrease quickly through the processes of the scatterings and recombination.However,the peak of E 1-HH 1 nearly does not change in the 25 ps because it is at the edge of the band gap.Comparing with the doped multiquantum wells,the scattering in the superlattice is faster because of the coupling of the wave functions in wells.The recombination in the doped multiquantum wells is faster than that in the superlattice because of the existence of the capture center in the doped multiquantum wells.