Abstract:The growth interruption technology is introduced to the growth of GaAsP/InAlGaAs quantum well (QW) structure using metal-organic chemical vapor deposition (MOCVD). The effect of growth interruption time (GIT) on the crystalline quality and optical properties are investigated. The two distinctive emission peaks are the transition recombination between the electron level of conduction band and the light and heavy hole level of valence band in the photoluminescence (PL) at room temperature. The PL peaks present a redshift and merge together with the increasing GIT, which is attributed to the QW energy level shift caused by the increase in arsenic concentrations in GaAsP QW, the diversified thickness of QW and the variations of indium components in the InAlGaAs barrier layer. The Gaussian deconvolution parameters in temperature-dependent PL (TDPL) show that the GaAsP/InAlGaAs QW with a GIT of 6 s has a 565.74 meV activation energy, enhancing the carrier confinement in QW and the PL intensity, while the 6 s-GIT GaAsP QW has the increasing interface roughness and the non-radiative centers at the InGaAsP intermediate layer, leading to a spectral broadening. The QW with 10 s-GIT exhibits a small full width at half maximum (FWHM) with the various temperature, indicating reduced interface roughness and excellent crystal quality. An increase in GIT may be suitable for optimizing the optical properties of GaAsP/InAlGaAs QW.

Exciton Transfer among Interface Islands in Growth-Interrupted Single Quantum Wells

Optical Study of Heterointerface Configuration in Narrow GaAs/AlGaAs Single Quantum Wells Prepared with Growth Interruption

Resolving Exciton Diffusion in Ingaas Quantum Wells Using Micro-Photoluminescence Mapping with A Lateral Excitation

The influence of growth interruption on the luminescence properties of Ga(As,Sb)-based type II heterostructures

Optical Properties of Diffused AlGaAs/GaAs Multiple Quantum Wells and Their Applications in High Power Laser

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

Photonic integrated circuits fabricated using quantum well intermixing

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

GaAs/AlGaAs quantum cascade lasers

Impact of the Interruption Duration on Photoluminescence Properties of MOCVD-Grown GaAsP/InAlGaAs Quantum Well Structures

Transient Femtosecond Spectroscopy in GaAs/AlGaAs Multiquantum Wells

Hot Carrier Photoluminescence from Strained InxGa1−xAs/GaAs Single Quantum Wells

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Impurity-free vacancy disordering of quantum wells for fabrication of multiple wavelength laser arrays

Exciton Localization and Delocalization in GaNAs/GaAs Quantum Wells

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Individually Resolved Luminescence from Closely Stacked GaN/AlN Quantum Wells

Photoluminescence Properties of a GaN0.015As0.985/GaAs Single Quantum Well under Short Pulse Excitation

Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

Selectively Excited Photoluminescence of GaAs1−xNx Single Quantum Wells

Quantum-well states and discontinuities in opto-electrical characteristics of SCH lasers