Abstract:Indium-gallium-zinc oxide (IGZO) mixed powders were mixed using planetary ball mill with the theoretical atomic ratio of In2Ga2ZnO7. Then the green compacts were formed with cold isostatically pressing (CIP), and the green compacts were sintered with different sintering temperatures and holding times. X-ray diffraction, X-ray fluorescence spectrometry, Electron probe micro-analysis, and Four-probe resistance were used to analyze the sintering behavior, composition, microstructure evolution, and electrical properties of the sintered specimen. The results showed that when the compact was sintered at 1250 °C, the compact mainly consisted of In2O3 and ZnGa2O4 even with a holding time up to 8 h. When the green compact was sintered at 1300 °C, the content of In2O3 and ZnGa2O4 phase gradually decreased with increasing holding time, and single-phase In2Ga2ZnO7 target with uniform microstructure was successfully prepared after 8 h of heat preservation. The relative density of the obtained compact reached a high value of 99.25%, and the resistivity reached the minimum of 3.17 × 10−3 Ω cm. With a sintering temperature of 1400 °C and 1500 °C, the specimen consisted of In2Ga2ZnO7 matrix phase and residual In2O3 and ZnGa2O4 phases. The residual phase content greatly increased with longer hold time from 1 h to 8 h. With higher sintering temperature and longer holding time, due to the concentration gradient and the volatilization of In2O3 in the residual phase, the elemental indium simultaneously diffused from the matrix phase to the residual phase and volatilized outward along the grain boundary, leading to the decomposition of the In2Ga2ZnO7 matrix phase.

Preparation of Indium-Zinc-Oxide Thin Film Transistors by Hot-Pressing Sintering Target

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Preparation of extraordinary high-density indium-tin oxide target on the basis of pressure-less sintering method

Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Impact of Deposition Temperature of the Silicon Oxide Passivation on the Performance of Indium Zinc Oxide Thin-Film Transistors

The Fabrication of Indium–Gallium–Zinc Oxide Sputtering Targets with Various Gallium Contents and Their Applications to Top-Gate Thin-Film Transistors

Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering.

Fabrication of high-density In2Ga2ZnO7 sputtering target with uniform microstructure

P‐1.2: Photoluminescence and Electrical Properties Study of ITO‐stabilized ZnO Thin‐Film Transistors with Different Annealing Temperatures

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Low-temperature fabrication of high performance indium oxide thin film transistors

Preparation and sintering of indium–gallium–zinc oxide ceramics with different zinc oxide contents

Influence of radio-frequency magnetron sputtering power on electrical characteristics and positive bias stress stability of indium tin zinc oxide thin-film transistors

Effect of Indium Doping on Bias Stability in Dual-Target Co-Sputtering InZnSnO Thin-Film Transistors

Realization of high transparent mobility zinc‐doped indium oxide (IZO) thin films by RF‐magnetron sputtering

Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors

Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance