Abstract:Indium-gallium-zinc oxide (IGZO) mixed powders were mixed using planetary ball mill with the theoretical atomic ratio of In2Ga2ZnO7. Then the green compacts were formed with cold isostatically pressing (CIP), and the green compacts were sintered with different sintering temperatures and holding times. X-ray diffraction, X-ray fluorescence spectrometry, Electron probe micro-analysis, and Four-probe resistance were used to analyze the sintering behavior, composition, microstructure evolution, and electrical properties of the sintered specimen. The results showed that when the compact was sintered at 1250 °C, the compact mainly consisted of In2O3 and ZnGa2O4 even with a holding time up to 8 h. When the green compact was sintered at 1300 °C, the content of In2O3 and ZnGa2O4 phase gradually decreased with increasing holding time, and single-phase In2Ga2ZnO7 target with uniform microstructure was successfully prepared after 8 h of heat preservation. The relative density of the obtained compact reached a high value of 99.25%, and the resistivity reached the minimum of 3.17 × 10−3 Ω cm. With a sintering temperature of 1400 °C and 1500 °C, the specimen consisted of In2Ga2ZnO7 matrix phase and residual In2O3 and ZnGa2O4 phases. The residual phase content greatly increased with longer hold time from 1 h to 8 h. With higher sintering temperature and longer holding time, due to the concentration gradient and the volatilization of In2O3 in the residual phase, the elemental indium simultaneously diffused from the matrix phase to the residual phase and volatilized outward along the grain boundary, leading to the decomposition of the In2Ga2ZnO7 matrix phase.

What problem does this paper attempt to address?

The paper primarily explores the preparation and performance study of indium gallium zinc oxide (In2Ga2ZnO7, abbreviated as IGZO) sputtering targets. IGZO materials exhibit great potential in transparent oxide semiconductor thin-film transistor (TOS TFT) applications due to their high mobility, chemical stability, and relatively simple preparation process. However, the preparation of high-quality IGZO sputtering targets remains a challenge. The main objective of the paper is to systematically study the sintering behavior, elemental composition, microstructural evolution, and electrical properties of IGZO ceramics through different sintering temperatures and holding times, and ultimately to successfully prepare single-phase In2Ga2ZnO7 sputtering targets with uniform microstructure. Specifically, the authors prepared a theoretical atomic ratio of In:Ga:Zn=2:2:1 IGZO powder mixture using a planetary ball milling method, then formed the green body using cold isostatic pressing technology, and sintered it at different temperatures (1250°C, 1300°C, 1400°C, and 1500°C). The experimental results show that: 1. When the sintering temperature is 1300°C, a single-phase In2Ga2ZnO7 target can be successfully prepared after 8 hours of holding, with a relative density of 99.25% and the lowest resistivity of 3.17×10^-3 Ω·cm. 2. As the sintering temperature increases to 1400°C or higher, the In2Ga2ZnO7 matrix phase begins to decompose, and the content of residual phases (In2O3 and ZnGa2O4) increases, mainly due to the volatilization of In2O3 and the concentration gradient causing indium elements to diffuse from the matrix phase to the residual phases. 3. Excessively high sintering temperatures (such as 1500°C) lead to further decomposition of the In2Ga2ZnO7 matrix phase, expansion of the residual phase regions, and affect the quality of the target. In summary, this study addresses the issue of how to prepare high-quality In2Ga2ZnO7 sputtering targets under suitable conditions and provides important references for subsequent applications in related fields such as TFT-LCD.

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