Fabrication of high-density In2Ga2ZnO7 sputtering target with uniform microstructure
Jiang-An Liu,Chen-Hui Li,Yang Zou,Liang Hu,Yu-Sheng Shi
DOI: https://doi.org/10.1016/j.mssp.2020.105342
IF: 4.1
2021-01-01
Materials Science in Semiconductor Processing
Abstract:Indium-gallium-zinc oxide (IGZO) mixed powders were mixed using planetary ball mill with the theoretical atomic ratio of In2Ga2ZnO7. Then the green compacts were formed with cold isostatically pressing (CIP), and the green compacts were sintered with different sintering temperatures and holding times. X-ray diffraction, X-ray fluorescence spectrometry, Electron probe micro-analysis, and Four-probe resistance were used to analyze the sintering behavior, composition, microstructure evolution, and electrical properties of the sintered specimen. The results showed that when the compact was sintered at 1250 °C, the compact mainly consisted of In2O3 and ZnGa2O4 even with a holding time up to 8 h. When the green compact was sintered at 1300 °C, the content of In2O3 and ZnGa2O4 phase gradually decreased with increasing holding time, and single-phase In2Ga2ZnO7 target with uniform microstructure was successfully prepared after 8 h of heat preservation. The relative density of the obtained compact reached a high value of 99.25%, and the resistivity reached the minimum of 3.17 × 10−3 Ω cm. With a sintering temperature of 1400 °C and 1500 °C, the specimen consisted of In2Ga2ZnO7 matrix phase and residual In2O3 and ZnGa2O4 phases. The residual phase content greatly increased with longer hold time from 1 h to 8 h. With higher sintering temperature and longer holding time, due to the concentration gradient and the volatilization of In2O3 in the residual phase, the elemental indium simultaneously diffused from the matrix phase to the residual phase and volatilized outward along the grain boundary, leading to the decomposition of the In2Ga2ZnO7 matrix phase.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied