Abstract:Amorphous indium gallium zinc oxide (IGZO) is the most suitable material choice for optoelectronic devices such as thin film transistor (TFT). However, usually, the physical properties of IGZO are of concern rather than the preparation process, which will complicate the control of the main properties of the material. To obtain a simple method of controlling IGZO properties, different proportions of mixed gases of oxygen and argon were added in the process of preparing thin films by pulsed laser deposition (PLD) for studying the fluence of atmosphere on the growth of IGZO. The structure and components of the film are characterized by X-ray diffraction (XRD), which confirmed the amorphous structure. A red-shift of the absorption peak in range of 450–850 nm was generated with the increase in argon concentration. Meanwhile, the transmission spectra showed that the transmittance of the material was lower than 80% in the range of 450–850 nm. Then, different target samples have a wide photoluminescence band at 200–800 nm. Oxygen vacancy defects were considered to be closely related to the photoluminescence behavior. The smallest surface roughness of the films prepared under 50% Ar and 50% O2 and the largest in 100% Ar are proved by atom force microstructure (AFM). Importantly, the greater difference in electrical properties reflects the sensitivity of different oxygen and argon concentrations to material effects. The carrier concentration can be adjusted from 1.08 × 1011 to 1.33 × 1016 by this method. Finally, the IGZO achieved in this work was used in a transistor, which reflected good diode characteristics.

Modulation of carrier density in indium–gallium–zinc-oxide thin film prepared by high-power impulse magnetron sputtering

Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous Ingazno Thin Films by Oxygen Partial Pressure

Effect of Sputtering Pressure on Surface Roughness, Oxygen Vacancy and Electrical Properties of A-Igzo Thin Films

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

The Fabrication of Indium–Gallium–Zinc Oxide Sputtering Targets with Various Gallium Contents and Their Applications to Top-Gate Thin-Film Transistors

Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In2O3-Ga2O3-Zn Thin Films

P‐5.4: Processing Effects on the Performances of Indium Zinc Bismuth Oxide Thin Film Transistors

Investigation on Physical Properties of IGZO Thin Films under the Conditions of Mixing Oxygen and Argon

Preparation and Optoelectronic Properties of A-Igzo Thin Films Deposited by RF Magnetron Sputtering at Different Working Pressures

Amorphous zinc-doped indium oxide channel layers prepared by DC reactive magnetron sputtering

High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

Analysis of Carrier Behavior for Amorphous Indium Gallium Zinc Oxide After Supercritical Carbon Dioxide Treatment

Preparation and sintering of indium–gallium–zinc oxide ceramics with different zinc oxide contents

Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors

Development of Transparent Oxide Thin Films for Flexible Devices

Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

The Influence of Rf Power on the Electrical Properties of Sputtered Amorphous Inga-Zn-O Thin Films and Devices

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Preparation and Characterization of Molybdenum-Doped Indium-Zinc-Oxide Thin Film Transistors

Migration of Weakly Bonded Oxygen Atoms in A-Igzo Thin Films and the Positive Shift of Threshold Voltage in TFTs

Influence of oxygen flow during sputtering process on the electrical properties of Ga-doped InZnSnO thin film transistor