Abstract:The device electrical and transient current characteristics of the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) are comprehensively investigated according to the radio-frequency (RF) power during the sputter-deposition of IGZO active film. The RF power dependencies of the oxygen vacancy (V O ) concentration in IGZO and the surface morphology of IGZO film are analyzed through X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). According to the RF power change in the range of 100 ∼ 250 W, the optimal point in terms of threshold voltage (V T ), ON current (I on ), field-effect mobility in the linear region (μ FE_lin ), hysteresis voltage (V Hys ), and the V T shift under current stress (ΔV T ) is found to be 200 W. The existence of the optimal power condition originates from the RF-power dependencies of the electron carrier concentration, the density of electron traps in gate insulator (GI), and the interface trap density related to surface roughness. Furthermore, compared to the direct current (DC) current stress (CS) condition, it is found that when V GS rises rapidly, a total transient current ΔI D can be decomposed into three components, i.e., ΔI OS , ΔI BOOST , ΔI DEG . While ΔI OS is attributed to the non-quasi static Fermi-level rising, ΔI BOOST and ΔI DEG result from the donor creation in IGZO and the electron trapping into GI and interface. Noticeably, the occurrence level of each component changes sensitively according to RF power. Our result suggests that the 200 W device has the least overshoot of transient current and shows the best reliability in terms of deterioration due to transient current characteristics.

Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films

Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous Ingazno Thin Films by Oxygen Partial Pressure

Comparative Study of A‐igzo TFTs with Direct Current and Radio Frequency Sputtered Channel Layers

Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance

Structural, Electrical, and Optical Properties of ZnInO Alloy Thin Films

Dependence of Electrical and Optical Properties of IGZO Films on Oxygen Flow

Investigation of the Microstructure, Optical and Electrical Properties of In-Ga-Zn Oxide Thin Film Using the Sol-Gel Method

Electron effective mass and electronic structure in nonstoichiometric a-IGZO films

Investigation on Physical Properties of IGZO Thin Films under the Conditions of Mixing Oxygen and Argon

Electrical And Photosensitive Characteristics Of A-Igzo Tfts Related To Oxygen Vacancy

Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors

Comparative Study of A-Igzo TFTs Deposited by RF and DC Sputtering

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Optical and electrical properties of room temperature prepared α-IGZO thin films using an In2Ga2ZnO7 ceramic target

Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In2O3-Ga2O3-Zn Thin Films

The Fabrication of Indium–Gallium–Zinc Oxide Sputtering Targets with Various Gallium Contents and Their Applications to Top-Gate Thin-Film Transistors

The granularity effect in amorphous InGaZnO$_4$ films prepared by rf sputtering method

Effects of parameters on the performance of amorphous IGZO thin films prepared by RF magnetron sputtering

Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition

Effect of annealing on characteristics of amorphous InGaZnO thin film transistors fabricated by sol-gel technical